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Details, datasheet, quote on part number:KMZ10A1
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D329
KMZ10A1 Magnetic field sensor
Product specification Supersedes data of 1996 Nov 14 File under Discrete Semiconductors, SC17 1998 Apr 06
Philips Semiconductors
Product specification
Magnetic field sensor
DESCRIPTION The KMZ10A1 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications such as navigation, current and earth magnetic field measurement etc. The special arrangement of the sensing chip allows the construction of coils for switching the auxiliary field (Hx) along the length axis of the sensor. The sensor can be operated at any frequency between DC and 1 MHz. PINNING PIN 1 2 3 4 SYMBOL +V O GND -VO VCC DESCRIPTION output voltage ground output voltage supply voltage
KMZ10A1
y handbook, halfpage Hx
H
1234
MGL420
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Ss Rbridge Voffset PARAMETER DC supply voltage magnetic field strength auxiliary field sensitivity sensitivity (with switched Hx) bridge resistance offset voltage - -0.5 - - - 0.85 -1.5 MIN. 5 - 0.5 14 22 - - TYP. - +0.5 - - - 1.75 +1.5 MAX. V kA/m kA/m mV / V ---------------kA / m mV / V ---------------kA / m k mV/V UNIT
CIRCUIT DIAGRAM
handbook, full pagewidth
MLC716
1 +VO
2 GND
3 VO V
4
CC
Fig.2 Simplified circuit diagram.
1998 Apr 06
2
Philips Semiconductors
Product specification
Magnetic field sensor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER DC supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 132 °C CONDITIONS - - -65 -40 MIN. 9
KMZ10A1
MAX. V 100 +150 +150
UNIT mW °C °C
handbook, halfpage
150
MSA927
P tot (mW) 100
50
0 0 50 100 Tamb (o C) 150
Fig.3 Power derating curve.
1998 Apr 06
3
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