|
Details, datasheet, quote on part number:KMZ10B
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D329
KMZ10B Magnetic field sensor
Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 31
Philips Semiconductors
Product specification
Magnetic field sensor
DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement, proximity detectors, etc. PINNING PIN 1 2 3 4 SYMBOL +VO GND -VO VCC DESCRIPTION output voltage ground output voltage supply voltage
1234
MGD806
KMZ10B
handbook, halfpage
Hy
Hx
Fig.1 Simplified outline SOT195.
QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage magnetic field strength auxiliary field sensitivity bridge resistance offset voltage - -2 - - 1.6 -1.5 MIN. 5 - 3 4 - - TYP. 12 +2 - - 2.6 +1.5 MAX. V kA/m kA/m mV / V ---------------kA / m k mV/V UNIT
CIRCUIT DIAGRAM
handbook, full pagewidth
MLC716
1 +VO
2 GND
3 VO
4 VCC
Fig.2 Simplified circuit diagram.
1998 Mar 31
2
Philips Semiconductors
Product specification
Magnetic field sensor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER bridge supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 °C CONDITIONS - - -65 -40 MIN.
KMZ10B
MAX. 12 120 +150 +150 V
UNIT mW °C °C
handbook, halfpage
150
MSA927
P tot (mW) 100
50
0 0 50 100 Tamb (o C) 150
Fig.3 Power derating curve.
1998 Mar 31
3
|
|
