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Details, datasheet, quote on part number:KMZ10C
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D329
KMZ10C Magnetic field sensor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC17 1998 Mar 24
Philips Semiconductors
Product specification
Magnetic field sensor
DESCRIPTION The KMZ10C is a magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement and proximity detectors, etc. PINNING PIN 1 2 3 4 SYMBOL +VO GND -VO VCC DESCRIPTION output voltage ground output voltage supply voltage Fig.1 Simplified outline.
1234
MBA737
KMZ10C
handbook, halfpage
Hy Hx
QUICK REFERENCE DATA SYMBOL VCC Tbridge Hy Hx S Rbridge Voffset PARAMETER DC supply voltage bridge operating temperature magnetic field strength auxiliary field sensitivity bridge resistance offset voltage - -40 -7.5 - - 1 -1.5 MIN. 5 - - 3 1.5 - - TYP. - +150 +7.5 - - 1.8 +1.5 MAX. V °C kA/m kA/m mV / V ---------------kA / m k mV/V UNIT
CIRCUIT DIAGRAM
MLC716
handbook, full pagewidth
1 +VO
2 GND
3 VO V
4
CC
Fig.2 Simplified circuit diagram.
1998 Mar 24
2
Philips Semiconductors
Product specification
Magnetic field sensor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge Note 1. Maximum operating temperature of the thin-film permalloy. PARAMETER DC supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 132 °C note 1 CONDITIONS - - -65 -40 MIN. 10 100 +150 +150 MAX.
KMZ10C
UNIT V mW °C °C
handbook, halfpage
150
MSA927
P tot (mW) 100
50
0 0 50 100 Tamb (o C) 150
Fig.3 Power derating curve.
1998 Mar 24
3
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