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Details, datasheet, quote on part number:KTY81/120
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD127
BZA800A-series Quadruple ESD transient voltage suppressor
Product specification Supersedes data of 2000 May 01 2000 Sep 25
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
FEATURES · ESD rating >8 kV, according to IEC1000-4-2 · SOT353 (SC-88A) surface mount package · Common anode configuration. APPLICATIONS · Computers and peripherals · Audio and video equipment · Communication systems. DESCRIPTION Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression. MARKING
1 2 3
handbook, halfpage5
BZA800A-series
PINNING PIN 1 2 3 4 5 cathode 1 common anode cathode 2 cathode 3 cathode 4 DESCRIPTION
4 1 3 2 4 5
TYPE NUMBER BZA856A BZA862A BZA868A BZA820A
MARKING CODE Z1 Z2 Z3 Z4
MGT580
Fig.1 Simplified outline SOT353 (SC-88A).
2000 Sep 25
2
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode IZ IF IFSM Ptot PZSM working current continuous forward current total power dissipation non repetitive peak reverse power dissipation: BZA856A, BZA862A, BZA868A, BZA820A Tstg Tj Note 1. DC working current limited by Ptot(max). THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS all diodes loaded storage temperature junction temperature Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C square pulse; tp = 1 ms; see Fig.3 - - - - - - PARAMETER CONDITIONS
BZA800A-series
MIN.
MAX.
UNIT
note 1 200 3.75 335
mA mA A mW
non-repetitive peak forward current tp = 1 ms; square pulse
24 17 +150 150
W W °C °C
-65 -
VALUE 370
UNIT K/W
2000 Sep 25
3
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZA856A BZA862A BZA868A BZA820A VZ working voltage BZA856A BZA862A BZA868A BZA820A rdiff differential resistance BZA856A BZA862A BZA868A BZA820A SZ temperature coefficient BZA856A BZA862A BZA868A BZA820A Cd diode capacitance BZA856A BZA862A BZA868A BZA820A IZSM non-repetitive peak reverse current BZA856A BZA862A BZA868A BZA820A tp = 1 ms; Tamb = 25 °C - - - - f = 1 MHz; VR = 0 - - - - IZ = 1 mA - - - - IZ = 1 mA - - - - VR = 3 V VR = 4 V VR = 4.3 V VR = 15 V IZ = 1 mA 5.32 5.89 6.46 19 - - - - CONDITIONS IF = 200 mA - MIN.
BZA800A-series
TYP. - - - - - 5.6 6.2 6.8 20 - - - - -0.2 1.8 3 16 - - - - - - - -
MAX. 1.3 2 000 700 200 100 5.88 6.51 7.14 21 400 300 200 125 - - - - 240 200 180 50 3.2 2.9 2.6 0.6
UNIT V nA nA nA nA V V V V mV/K mV/K mV/K mV/K pF pF pF pF A A A A
2000 Sep 25
4
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA800A-series
handbook, halfpage
10
MGT583
102 handbook, halfpage PZSM
MGT584
BZA856A I ZSM (A) BZA862A (W)
BZA856A, BZA862A, BZA868A
BZA820A
BZA868A 1 10
BZA820A
10-1 10- 2
10-1
1
t p (ms)
10
1 10-2
10-1
1
t p (ms)
10
PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.3 Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time.
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse).
MGT585
MGT586
handbook, halfpage
200 Cd 160
handbook, halfpage
400
(pF)
Ptot (mW) 300
120 BZA856A 80 BZA862A BZA868A 100 40 BZA820A 0 0 5 10 15 0 0 50 100 Tamb (°C) 150 200
VR (V)
Tj = 25 °C; f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
Fig.5 Power derating curve.
2000 Sep 25
5
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