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Part: LBE2003S
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Microwave
Description: LBE2003S; LBE2009S; LCE2009S; NPN Microwave Power Transistors
Company: Philips Semiconductors
Datasheet: Download LBE2003S datasheet File size : 87 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03
Philips Semiconductors
Product specification
NPN microwave power transistors
FEATURES · Diffused emitter ballasting resistors · Self-aligned process entirely ion implanted and gold metallization · Optimum temperature profile · Excellent performance and reliability. APPLICATIONS · Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION
LBE2003S; LBE2009S; LCE2009S
The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING DESCRIPTION collector emitter base emitter
handbook, halfpage
4
handbook, halfpage
4
c
3 1 3
c b e
2 Top view Marking code: LCE2009S = 408.
MAM330
b e
2
1
Top view
MAM329
Marking code: LBE2003S = 407; LBE2009S = 409.
Fig.1 Simplified outline and symbol (SOT441A).
Fig.2 Simplified outline and symbol (SOT442A).
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. TYPE NUMBER LBE2003S LBE2009S LCE2009S MODE OF OPERATION Class-A (CW) linear Class-A (CW) linear f (GHz) 2 2 VCE (V) 18 18 IC (mA) 30 110 PL1 (mW) 200 700 Gpo (dB) 10 9 Zi () 6.2 + j30 7.5 + j15 ZL () 17.5 + j7 17.5 + j39
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
2
Philips Semiconductors
Product specification
NPN microwave power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER PARAMETER collector-base voltage collector-emitter voltage LBE2003S LBE2009S; LCE2009S VCEO VEBO IC collector-emitter voltage emitter-base voltage collector current (DC) LBE2003S LBE2009S; LCE2009S Ptot total power dissipation LBE2003S LBE2009S; LCE2009S Tstg Tj Tsld storage temperature operating junction temperature soldering temperature Tmb 75 °C RBE = 220 RBE = 100 open base open collector CONDITIONS open emitter
LBE2003S; LBE2009S; LCE2009S
MIN.
MAX. 40 V V V V V
UNIT
- - - - - - - - -65 -
35 35 16 3 90 250 1.4 3.5 +150 200 235
mA mA W W °C °C °C
at 0.3 mm from case; t = 10 s -
102 handbook, halfpage
MGD996
handbook, halfpage
2
MGD989
IC (mA)
Ptot ( W) 1.5
(1)
(2)
(3)
10
1
0.5
1 10
15
20
30
40
60
100 VCE (V)
0 -50
0
50
100
150 200 Tmb (oC)
Tmb 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 220 . (3) Second breakdown limit (independent of temperature).
Fig.4 Fig.3 DC SOAR; LBE2003S.
Power dissipation derating as a function of mounting-base temperature; LBE2003S.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
3
Others parts begin by lb
LB-1 LB-2 LB-3 LB-4 LB-5 LB-6
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