Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
SYMBOL PARAMETER MAC223 VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX MAX. UNIT V A
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MAC223 VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 91 °C full sine wave; 25 °C prior to surge 10 ms ITM 0.2 A; dIG/dt = 0.2 A/µs G+ -40 MIN. A6 MAX. 6001 A2s A/µs °C UNIT
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient
25 °C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS T2MIN. 0.25 TYP. MAX. UNIT V mA
Holding current On-state voltage Gate trigger voltage Off-state leakage current
25 °C unless otherwise stated SYMBOL dVD/dt dVcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); = 125 °C; exponential waveform; gate open circuit VDM = 95 °C; IT(RMS) 25 A; dIcom/dt = 9 A/ms; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/µs MIN. 100 TYP. 10 2 MAX. UNIT V/µs µs