|Category||RF & Microwaves => RFID (RF Identification Device)|
|Description||MIFARE Ultralight C
NXP Semiconductors has developed MIFARE MF0ICU2 - MIFARE Ultralight C - to be used with Proximity Coupling Devices (PCD) according to ISO/IEC 14443A (see Ref. 1 \"ISO/IEC\"). The communication layer (MIFARE RF Interface) complies to parts 2 and 3 of the ISO/IEC 14443A standard. The MF0ICU2 is primarily designed for limited use applications such as public transportation, event ticketing and NFC Forum Tag Type 2 applications.
|Company||Philips Semiconductors (Acquired by NXP)|
|Datasheet||Download MF0ICU2 datasheet
|Rev. 3.2 19 May 2009 171432 Product short data sheet PUBLIC
NXP Semiconductors has developed MIFARE MF0ICU2 - MIFARE Ultralight to be used with Proximity Coupling Devices (PCD) according to ISO/IEC 14443A (see Ref. 1 "ISO/IEC"). The communication layer (MIFARE RF Interface) complies to parts 2 and 3 of the ISO/IEC 14443A standard. The MF0ICU2 is primarily designed for limited use applications such as public transportation, event ticketing and NFC Forum Tag Type 2 applications.
In the MIFARE system, the MF0ICU2 is connected to a coil with a few turns. The MF0ICU2 fits for the TFC.0 (Edmonson) and TFC.1 ticket formats as defined 753-2. TFC.1 ticket formats are supported by the MF0xxU20 chip featuring an on-chip resonance capacitor of 16.9 pF. The smaller TFC.0 tickets are supported by the MFxxU21 chip holding an on-chip resonance capacitor of 50 pF. When the ticket is positioned in the proximity of the coupling device (PCD) antenna, the high speed RF communication interface allows the transmission of the data with a baud rate of 106 kbit/s.
An intelligent anticollision function according to ISO/IEC 14443 allows to operate more than one card in the field simultaneously. The anticollision algorithm selects each card individually and ensures that the execution of a transaction with a selected card is performed correctly without data corruption resulting from other cards in the field.
The anticollision function is based an IC individual serial number called Unique IDentification. The UID of the is 7 bytes long and supports cascade level 2 according to ISO/IEC 14443-3.
3DES Authentication Anti-cloning support by unique 7-byte serial number for each device 32-bit user programmable OTP area Field programmable read-only locking function per page for first 512-bit Read-only locking per block for rest of memory
I Contactless transmission of data and supply energy (no battery needed) I Operating distance: 100 mm (depending on field strength and antenna geometry) I Operating frequency: 13.56 MHz I Fast data transfer: 106 kbit/s I High data integrity: 16-bit CRC, parity, bit coding, bit counting I True anticollision I 7-byte serial number (cascade level 2 according to ISO/IEC 14443-3) I Typical ticketing transaction: ms I Fast counter transaction: 10 ms
1536-bit total memory 1184-bit user memory 36 pages user r/w area 512-bit compatible to MF0ICU1 Field programmable read-only locking function per page for first 512-bit Field programmable read-only locking function per block 32-bit user definable One-Time Programmable (OTP) area 16-bit counter Data retention of 5 years Write endurance 10000 cycles
Public transport Event ticketing Prepaid applications Loyalty schemes NFC Forum Tag Type 2 Toy and amusement
Table 1. Symbol fi Ci Quick reference data Parameter input frequency input capacitance 17 pF version (bare silicon and 50 pF version EEPROM characteristics tcy(W) tret Nendu(W)write cycle time retention time write endurance Tamb 22 °C Tamb 22 °C
Stresses above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only. Operation of the device at these or any other conditions above those given in the Characteristics section of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. LCR meter HP 4285, Tamb = 22 °C, Cp-D, = 13.56 MHz, 2 Veff.
Description 8 inch wafer (sawn, laser diced; 120 µm thickness, on film frame carrier; electronic fail die marking according to SECSII format) 8 inch wafer (sawn, laser diced; 120 µm thickness, on film frame carrier; electronic fail die marking according to SECSII format) tape
PLLMC plastic leadless module carrier package; 35 mm wide tape PLLMC plastic leadless module carrier package; 35 mm wide
|Related products with the same datasheet|
|Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)|
|MF0ICU2001DUD MIFARE Ultralight CNXP Semiconductors has developed MIFARE MF0ICU2 - MIFARE Ultralight C - to be used with Proximity Coupling Devices (PCD) according to ISO/IEC 14443A (see Ref. 1 \"ISO/IEC\"). The communication|
|PESD5V0L1UA Low Capacitance Unidirectional ESD Protection DiodesLow capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect|
|PSMN1R5-25YL N-channel TrenchMOS Logic Level FETLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial|
|PCA8565 Real Time Clock/calendarThe PCA8565 is a CMOS1 real time clock and calendar optimized for low power consumption. A programmable clock output, interrupt output and voltage-low detector are also provided.|
|TL431SDT Adjustable Precision Shunt RegulatorThree-terminal shunt regulator family with an output voltage range between Vref and 36 V, to be set by two external resistors.|
|LPC2925FBD100 ARM9 Microcontroller With CAN, LIN, And USThe LPC2921/2923/2925 combine an ARM968E-S CPU core with two integrated TCM blocks operating at frequencies of up to 125 MHz, Full-speed USB 2.0 device controller,|
|BGU7003 Wideband Silicon Germanium Low-noise Amplifier MMICThe BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small|
|PHD108NQ03LT N-channel TrenchMOS Logic Level FETLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing,|
|PMEG2005CT 500 MA Low Vf Dual MEGA Schottky Barrier RectifierPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress|
|PESD5V0S1UJ Unidirectional ESD Protection For Transient Voltage SuppressionUnidirectional ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect|
|74LVC1T45 Dual Supply Translating Transceiver; 3-stateThe 74LVC1T45; 74LVCH1T45 are single bit, dual supply transceivers with 3-state outputs that enables bidirectional level translation. They feature one data|
|ACT108W-600E AC Thyristor Power SwitchAC Thyristor power switch in a SOT223 surface-mountable plastic package|
|BUK9MJJ-55PTT Dual TrenchPLUS Logic Level FETDual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state|
|PCA9626 24-bit Fm+ I2C-bus 100 MA 40 V LED DriverThe PCA9626 is an I2C-bus controlled 24-bit LED driver optimized for voltage switch dimming and blinking 100 mA Red/Green/Blue/Amber (RGBA) LEDs. Each LED output|
|PMEG6002EJ 200 MA Low Vf MEGA Schottky Barrier RectifierPlanar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323F|
HEF4076BN : Quadruple D-type Register With 3-state Outputs
P80C54SFBB : 80c51 8-bit Microcontroller Family 8k.64k/256.1k Otp/rom/romless, Low Voltage 2.7v.5.5v, Low Power, High Speed 33 MHZ
P87LPC764BN : 80C51 architecture P87LPC764; Low Power, Low Price, Low Pin Count (20 Pin) Microcontroller With 4 Kbyte OTP;; Package: SOT146-1 (DIP20), SOT163-1 (SO20), SOT360-1 (TSSOP20)
PCF1252-0 : General Purpose PCF1252-X Family; Threshold Detector And Reset Generator
PLVA2665A : Low-voltage Avalanche Regulator Double Diodes
TDA1510 : 24 W BTL or 2 X 12 W Stereo Car Radio Power Amplifier
TDA5147K : Servo/Spindle 12v Voice Coil Motor (vcm) Driver And Spindle Motor Drive Combination Chip
1D0261-3 : = ;; Size LXWXH = 1.46 X 1.75 X 0.11" ;; Packaging = Caseless ;; Frequency MHZ = 70-110 ;; Power Handling Watts = 600.
1G0619-10 : = Directional Couplers ;; Size LXWXH = 1.3 X 0.9 X 0.37" ;; Packaging = Aluminum Cased ;; Frequency MHZ = 12400-18000 ;; Power Handling Watts = 50.
1SV149 : VR (v) = 15 ;; Ir (nA) = 50 ;; CT(1) (pF) = 435 to 540 ;; CT(2) (pF) = 19.9 to 30 ;; CT(1)/CT(2) = - ;; .rs(Typ.) Ohms = - ;; Package = Mini ;; Application = am Tuning.
40285 : Power Dividers. = Power Dividers ;; Size LXWXH = 5.2 X 2.5 X 0.37" ;; Packaging = Aluminum Cased ;; Frequency MHZ = 1000-2000 ;; Power Handling Watts = 25.
AT4520 : Digital Attenuators. 5Bits. Very Low DC Power Consumption Attenuation In Steps From 31 dB Single Or Dual Power Supply Voltages Parallel Data Interface 50 Ohm Compatible Impedance Space Saving LPCCTM Surface Mount Packaging The Honeywell a 5-bit digital attenuator that is ideal for use in broadband communication system applications that require accuracy, speed and low power consumption.
CXG1140ER : Triple Low Noise Amplifier/dual Mixer. The is a triple low noise amplifier/dual mixer. This IC is designed using the Sony's GaAs JFET process. Single 3V power supply operation 2-pin control by the on-chip logic circuit High gain: = 16.5dB (LNA typ.) = 10dB (MIX typ.) Low noise figure: to 1.75dB (LNA typ.) = 4.5dB (MIX typ.) Low LO input power operation: PLO 15dBm 24-pin VQFN small package.
FT300DL : Phase Control SCR 300 Amperes Avg 200-1200 Volts.
MASWGM0001-DIE : Switch with Drivers. 2 - 14 GHZ DPDT Non-reflective Switch Mmic.
MD-160 : Termination Insensitive Mixer, 1 - 1500 MHZ. Third Order Intermodulation Ratio is Insensitive to Port Mismatches Conversion Loss: 7 dB Typical Midband VSWR: Typically Less than 1.5:1 @ Midband Impedance: 50 Ohms Nominal Maximum Input Power: 350 mW max. @ 25°C, Derated @ 3.5 mW/°C MIL-STD-883 Screening Available The unique design of the termination insensitive mixer (TIM) enables it to apply high.
RA03M8894M : Modules->800MHz Band. The 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates to 60 dB. The output power and drain.
SW-137 : 0.01-3 Ghz, GAAS SPDT Reflective Switch. Isolation: 48dB Typ. at 1 GHz High Intercept Point Over Wide Bandwidth Trise, Tfall: 5 nS Typ. DIP Package Integral TTL Driver (CMOS Compatible) 50 Nominal Impedance M/A-COM's is a GaAs MMIC SPDT reflective switch with an integral Silicon ASIC driver. This device a 14-lead DIP package. These switches offer high intercept points over a wide bandwidth.
TIM1011-15L : X, Ku-Band Power GaAs IMFETs. Frequency Band (GHz) = 10.7-11.7 ;; P1dB (dBm) = 42.0 ;; G1dB (dB) = 7.0 ;; P.A.E. (%) Typ. = 31 ;; VDS (V) = 9 ;; Ids (A) Typ. = 4.5 ;; IM3 (dBc) Typ. = -45 ;; RTH ( C/W) Typ. = 2.0.
HT6220A : Multi-Purpose Encoders The devices are CMOS LSI encoders designed for use in remote control systems. They are capable of encoding 16-bit address codes and 8-bit data codes. Each address/data input can be set to one of the two logic states, 0 and 1. The HT6220A/HT6221A/HT6222A contain 30keys (K1~K16, K17~K20, K33~K34, K37~K38, K41~K42, K45~K46, K49~K50),.
HMC939LP4 : 1.0 DB LSB 5-Bit Digital Attenuator SMT, 0.1 - 33 GHz The HMC939LP4 & HMC939LP4E are broadband 5-bit GaAs IC digital attenuators in low cost leadless surface mount packages. Covering 0.1 to 33.0 GHz, the insertion loss is less than 5 dB typical. The attenuator bit values are 1.0 (LSB), 2, 4, 8, 16 for a total attenuation of 31 dB. Attenuation accuracy.