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Details, datasheet, quote on part number:MX0912B251Y
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B251Y NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES · Interdigitated structure; high emitter efficiency · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR · Gold metallization realizes very stable characteristics and excellent lifetime · Multicell geometry gives good balance of dissipated power and low thermal resistance · Input and output matching cell allows an easier design of circuits. APPLICATIONS
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MX0912B251Y
PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
olumns
c b
Intended for use in common base class C broadband pulse power amplifier from 960 to 1 215 MHz for TACAN application. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C.
3 2 Top view
3
e
MAM045
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION Class C tp = 10 µs; = 10% f (GHz) 0.960 to 1.215 VCC (V) 50 PL (W) >235 Gpo (dB) >7 C (%) >42 Zi/ZL () see Figs 7 and 8
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
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Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current total power dissipation (peak power) storage temperature operating junction temperature soldering temperature t 10 s; note 1 open emitter RBE = 0 open base open collector tp 10 µs; 10% Tmb = 75 °C; tp 10 µs; 10% CONDITIONS
MX0912B251Y
MIN. - - - - - - -65 - -
MAX. 65 60 20 3 15 690 +200 200 235
UNIT V V V V A W °C °C °C
handbook, halfpage
1000 Ptot (W) 800
MGL041
600
400
200
0 -50
0
100
Tmb (°C)
200
tp = 10 µs; = 10%; Ptot max = 690 W.
Fig.2
Maximum power dissipation derating as a function of mounting base temperature.
1997 Feb 19
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