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Details, datasheet, quote on part number:P14884
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Datasheet text preview:
PI4884
TrenchMOSTM logic level FET
M3D315
Rev. 02 -- 12 April 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PI4884 in SOT96-1 (SO8).
1.2 Features
s Low on-state resistance s Fast switching.
1.3 Applications
s DC to DC converters s Por table equipment applications.
1.4 Quick reference data
s VDS = 30 V s Ptot = 2.5 W s ID = 12 A s RDSon = 16.5 m.
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) gate (g) drain (d)
g 1 Top view 4
MBK187
Simplified outline
8 5
Symbol
d
MBB076
s
SOT96-1 (SO8)
Philips Semiconductors
PI4884
TrenchMOSTM logic level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source (diode forward) current Tsp = 25 °C Tsp = 25 °C; Figure 2 and 3 Tsp = 25 °C; pulsed; Figure 3 Tsp = 25 °C; Figure 1 Conditions Tj = 25 to 150 °C Min -55 -55 Max 30 ±20 12 45 2.5 +150 +150 12 Unit V V A A W °C °C A
Source-drain diode
9397 750 09583
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 12 April 2002
2 of 12
Philips Semiconductors
PI4884
TrenchMOSTM logic level FET
03aa17
120 Pder (%)
120 I der (%) 80
03aa25
80
40
40
0 0 50 100 150 Tsp (ºC) 200
0 0 50 100 150 200 o Tsp ( C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 5 V
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
102 ID (A) 10 Limit RDSon = VDS / ID
Fig 2. Normalized continuous drain current as a function of solder point temperature.
003aaa160
1 DC
tp = 10 µs 100 µs 1 ms 10 ms 1s
10-1
10-2 10-1 1 10 VDS (V) 102
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09583
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 12 April 2002
3 of 12
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