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Details, datasheet, quote on part number:PBSS3515E
 
 
Part:PBSS3515E
Category:Discrete => Transistors => Bipolar => Low VCE(sat)
Description:15 V, 0.5 A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2515E. Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
Company:Philips Semiconductors
Datasheet:Download PBSS3515E datasheet   File size : 114 kB
Request For quote:  Find where to buy PBSS3515E