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Details, datasheet, quote on part number:PBSS3515F
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| Part: | PBSS3515F |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS3515F; 15 V Low Vcesat PNP Transistor;; Package: SOT490 (SC-89) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS3515F datasheet File size : 66 kB |
| Request For quote: | Find where to buy PBSS3515F
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PBSS3515F 15 V low VCEsat PNP transistor
Product specification Supersedes data of 2001 Jan 26 2001 Sep 21
Philips Semiconductors
Product specification
15 V low VCEsat PNP transistor
FEATURES · Low collector-emitter saturation voltage · High current capabilities · Improved thermal behaviour due to flat leads. APPLICATIONS · General purpose switching and muting · Low frequency driver circuits · LCD backlighting · Audio frequency general purpose amplifier applications · Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCEsat transistor in a SC-89 (SOT490) plastic package. NPN complement: PBSS2515F. MARKING TYPE NUMBER PBSS3515F MARKING CODE 2B Fig.1
handbook, halfpage
PBSS3515F
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER emitter-collector voltage collector current (DC) peak collector current equivalent on-resistance MAX -15 -500 -1 <500 UNIT V mA A m
3 3 1 2
MAM411
1 Top view
2
Simplified outline (SC-89; SOT490) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -15 -15 -6 -500 -1 -100 250 +150 150 +150 V V V mA A mA mW °C °C °C UNIT
2001 Sep 21
2
Philips Semiconductors
Product specification
15 V low VCEsat PNP transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 500
PBSS3515F
UNIT K/W
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = -15 V; IE = 0 VCB = -15 V; IE = 0; Tj = 150 °C VEB = -5 V; IC = 0 VCE = -2 V; IC = -10 mA VCE = -2 V; IC = -100 mA; note 1 VCE = -2 V; IC = -500 mA; note 1 VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA IC = -200 mA; IB = -10 mA IC = -500 mA; IB = -50 mA; note 1 RCEsat VBEsat VBE fT Cc Note 1. Pulse test: tp 300 µs; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -500 mA; IB = -50 mA; note 1 IC = -500 mA; IB = -50 mA; note 1 VCE = -2 V; IC = -100 mA; note 1 IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz MIN. - - - 200 150 90 - - - - - - 100 - TYP. - - - - - - - - - 300 - - 280 - MAX. -100 -50 -100 - - - -25 -150 -250 <500 -1.1 -0.9 - 10 mV mV mV m V V MHz pF UNIT nA µA nA
2001 Sep 21
3
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