|
Details, datasheet, quote on part number:PBSS3515M
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor
Product specification 2003 Jul 22
Philips Semiconductors
Product specification
15 V, 0.5 A PNP low VCEsat (BISS) transistor
FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High efficiency leading to reduced heat generation · Reduced printed-circuit board requirements. APPLICATIONS · Power management: DC-DC converter Supply line switching Battery charger LCD backlighting. · Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load drivers (e.g. relays, buzzers and motors).
handbook, halfpage
PBSS3515M
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. -15 -500 -1 <500 UNIT V mA A m
3 3 1 2
DESCRIPTION Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2515M. MARKING TYPE NUMBER PBSS3515M MARKING CODE DB
2
1 Bottom view
MAM469
Fig.1 Simplified outline (SOT883) and symbol.
2003 Jul 22
2
Philips Semiconductors
Product specification
15 V, 0.5 A PNP low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Refer to SOT883 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; notes 1 and 2 Tamb 25 °C; note 1 and 3 CONDITIONS open emitter open base open collector notes 1 and 2 - - - - - - - - -65 - -65 MIN.
PBSS3515M
MAX. -15 -15 -6 -500 -1 -100 250 430 +150 150 +150 V V V
UNIT
mA A mA mW mW °C °C °C
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; notes 1 and 2 in free air; notes 1, 3 and 4 VALUE 500 290 UNIT K/W K/W
Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering Reflow soldering is the only recommended soldering method.
2003 Jul 22
3
|
|
