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Details, datasheet, quote on part number:PBSS3515VS
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| Part: | PBSS3515VS |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS3515VS; 15 V Low Vcesat PNP Double Transistor;; Package: SOT666 (SS-Mini) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS3515VS datasheet File size : 70 kB |
| Request For quote: | Find where to buy PBSS3515VS
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS3515VS 15 V low VCEsat PNP double transistor
Product specification Supersedes data of 2001 Sep 27 2001 Nov 07
Philips Semiconductors
Product specification
15 V low VCEsat PNP double transistor
FEATURES · 300 mW total power dissipation · Very small 1.6 x 1.2 mm ultra thin package · Self alignment during soldering due to straight leads · Low collector-emitter saturation voltage · High current capability · Improved thermal behaviour due to flat leads · Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area · Reduces required PCB area · Reduced pick and place costs. APPLICATIONS · General purpose switching and muting · Low frequency driver circuits · LCD backlighting · Audio frequency general purpose amplifier applications · Battery driven equipment (mobile phones, video cameras and hand-held devices).
6 5 4
PBSS3515VS
QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. -15 -1 <500 UNIT V A m
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5
4
TR2 TR1
DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. NPN complement: PBSS2515VS. MARKING TYPE NUMBER PBSS3515VS MARKING CODE 35 Fig.1 Simplified outline (SOT666) and symbol.
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Top view
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MAM450
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2001 Nov 07
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Philips Semiconductors
Product specification
15 V low VCEsat PNP double transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 °C; note 1 - -65 - 65 Tamb 25 °C; note 1 - MIN.
PBSS3515VS
MAX. -15 -15 -6 -500 -1 -100 200 +150 150 +150
UNIT
Per transistor unless otherwise specified VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 UNIT K/W total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector V V V mA A mA mW °C °C °C
2001 Nov 07
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