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Details, datasheet, quote on part number:PBSS4140DPN
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| Part: | PBSS4140DPN |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS4140DPN; 40 V Low Vcesat Npn/pnp Transistor;; Package: SOT457 (TSOP6, SMT6, SSOT6) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS4140DPN datasheet File size : 79 kB |
| Request For quote: | Find where to buy PBSS4140DPN
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4140DPN 40 V low VCEsat NPN/PNP transistor
Product specification 2001 Dec 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
FEATURES · 600 mW total power dissipation · Low collector-emitter saturation voltage · High current capability · Improved device reliability due to reduced heat generation · Replaces two SOT23 packaged low VCEsat transistors on same PCB area · Reduces required PCB area · Reduced pick and place costs. APPLICATIONS · General purpose switching and muting · LCD backlighting · Supply line switching circuits · Battery driven equipment (mobile phones, video cameras and hand-held devices).
6 handbook, halfpage 5 4
PBSS4140DPN
QUICK REFERENCE DATA SYMBOL VCEO IC ICM TR1 TR2 RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX. 40 1 2 - - <500 UNIT V A A - - m
6
5
4
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package.
1 2 3
MAM445
TR1
1
2
3
MARKING TYPE NUMBER PBSS4140DPN MARKING CODE M2 Fig.1
Top view
Simplified outline SC74 (SOT457) and symbol.
2001 Dec 13
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - Tamb 25 °C; note 1 - -65 - -65 Tamb 25 °C; note 1 -
PBSS4140DPN
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 208 UNIT K/W total power dissipation 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 40 40 5 1 2 1 370 +150 150 +150 V V V A A A mW °C °C °C
2001 Dec 13
3
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