|
Details, datasheet, quote on part number:PBSS4140S
| |
| Part: | PBSS4140S |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS4140S; 40 V Low Vcesat NPN Transistor;; Package: SOT54 (SPT, E-1) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS4140S datasheet File size : 62 kB |
| Request For quote: | Find where to buy PBSS4140S
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D186
PBSS4140S 40 V low VCEsat NPN transistor
Product specification 2001 Nov 27
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES · High power dissipation (830 mW) · Ultra low collector-emitter saturation voltage · 1 A continuous current · High current switching · Improved device reliability due to reduced heat generation. APPLICATIONS · Medium power switching and muting · Linear regulators · DC/DC converter · LCD back-lighting · Supply line switching circuits · Battery driven equipment (mobile phones, video cameras and hand-held devices).
handbook, halfpage
PBSS4140S
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT 40 1 2 <500 V A A m
1
DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5140S. MARKING TYPE NUMBER PBSS4140S MARKING CODE S4140S
2 3
1
2
MAM459
3
Fig.1 Simplified outline (SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 40 40 5 1 2 1 830 +150 150 +150 V V V A A A mW °C °C °C UNIT
2001 Nov 27
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1
PBSS4140S
VALUE 150
UNIT K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 40 V; IC = 0 VCB = 40 V; IC = 0; Tamb = 150 °C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 µs; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 500 mA; IB = 50 mA; note 1 IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz - - - - 300 300 200 - - - - - - 150 - MIN. - - - - - - - - - - 260 - - - - TYP. MAX. 100 50 100 100 - 900 - 200 250 500 <500 1.2 1.1 - 10 mV mV mV m V V MHz pF UNIT nA µA nA nA
2001 Nov 27
3
|
|
