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Details, datasheet, quote on part number:PBSS4140U
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| Part: | PBSS4140U |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS4140U; 40V Low Vcesat NPN Transistor;; Package: SOT323 (UMT3, CMPAK) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS4140U datasheet File size : 66 kB |
| Request For quote: | Find where to buy PBSS4140U
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PBSS4140U 40 V low VCEsat NPN transistor
Product specification Supersedes data of 2001 Mar 27 2001 Jul 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES · Low collector-emitter saturation voltage · High current capabilities. · Improved device reliability due to reduced heat generation. · Enhanced performance over SOT231A general purpose packaged transistors. APPLICATIONS · General purpose switching and muting · LCD backlighting · Supply line switching circuits · Battery driven equipment (mobile phones, video cameras and hand-held devices).
handbook, halfpage
PBSS4140U
QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 40 2 <500 UNIT V A m
3
DESCRIPTION NPN low VCEsat transistor in a SOT323 plastic package. PNP complement: PBSS5140U. MARKING TYPE NUMBER PBSS4140U 41t MARKING CODE Fig.1
1 Top view 2
MAM062
3 1 2
Simplified outline SOT323 and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2001 Jul 13 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 Tamb 25 °C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN. MAX. 40 40 5 1 2 1 250 350 +150 150 +150 V V V A A A mW mW °C °C °C UNIT
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 500 357
PBSS4140U
UNIT K/W K/W
Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 40 V; IC = 0 VCB = 40 V; IC = 0; Tamb = 150 °C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 µs; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 500 mA; IB = 50 mA; note 1 IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz - - - - 300 300 200 - - - - - - 150 - MIN. - - - - - - - - - - 260 - - - - TYP. MAX. 100 50 100 100 - 900 - 200 250 500 <500 1.2 1.1 - 10 mV mV mV m V V MHz pF UNIT nA µA nA nA
2001 Jul 13
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