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Details, datasheet, quote on part number:PBSS4140V
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| Part: | PBSS4140V |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS4140V; 40 V Low Vcesat NPN Transistor;; Package: SOT666 (SS-Mini) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS4140V datasheet File size : 64 kB |
| Request For quote: | Find where to buy PBSS4140V
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4140V 40 V low VCEsat NPN transistor
Product specification Supersedes data of 2001 Nov 05 2002 Jun 20
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES · 300 mW total power dissipation · Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package · Improved thermal behaviour due to flat leads · Excellent coplanarity due to straight leads · Low collector-emitter saturation voltage · High current capabilities · Reduced required PCB area. APPLICATIONS · General purpose switching and muting · LCD backlighting · Supply line switching circuits · Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. MARKING TYPE NUMBER PBSS4140V MARKING CODE 22
1 Top view 2 3
handbook, halfpage
PBSS4140V
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 1 2 <190 UNIT V A A m
6
5
4 1, 2, 5, 6 3 4
MAM444
Fig.1
Simplified outline (SOT666) and symbol.
2002 Jun 20
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM ICRP IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current repetitive peak collector current base current (DC) peak base current total power dissipation Tamb 25 °C; note 2 Tamb 25 °C; note 3 Tamb 25 °C; notes 1 and 2 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: tp 30 ms; 0.2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. storage temperature junction temperature operating ambient temperature note 1 CONDITIONS open emitter open base open collector - - - - - - - - - - - -65 - -65 MIN.
PBSS4140V
MAX. 40 40 5 1 3 2 300 1 300 500 1.2 +150 150 +150
UNIT V V V A A A mA A mW mW W °C °C °C
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 notes 1 and 3 Notes 1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Operated under pulsed conditions: tp 30 ms; 0.2. Soldering The only recommended soldering method is reflow soldering. CONDITIONS VALUE 410 215 110 UNIT K/W K/W K/W
2002 Jun 20
3
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