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Details, datasheet, quote on part number:PBSS4160K
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Datasheet text preview:
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 -- 29 April 2004 Objective data sheet
1. Product profile
1.1 General description
NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP complement: PBSS5160K.
1.2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement of medium power transistor BCP55 and BCX55.
1.3 Applications
s Major application segments x Automotive 42 V power x Telecom infrastructure x Industrial s Power management x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications, e.g. lamps and LEDs x Inductive load driver, e.g. relays, buzzers and motors.
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max 60 1 2 280 Unit V A A m
Philips Semiconductors
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1 2 3 Discrete pinning Description base emitter collector
3
Simplified outline
Symbol
3 1 2
1 Top view
2
sym021
3. Ordering information
Table 3: Type number PBSS4160K Ordering information Package Name Description plastic surface mounted package; 3 leads Version SOT346
4. Marking
Table 4: Marking Marking code [1] *XB Type number PBSS4160K
[1] * = t: made in Malaysia.
9397 750 12702
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 29 April 2004
2 of 12
Philips Semiconductors
PBSS4160K
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current t = 1 ms or limited by Tj(max) tp 300 µs; 0.02 Tamb 25 °C
[1] [2]
Conditions open emitter open base open collector
Min -
Max 80 60 5 1 2
Unit V V V A A
IB IBM Ptot Tj Tamb Tstg
[1] [2]
base current (DC) peak base current total power dissipation junction temperature operating ambient temperature storage temperature
-65 -65
300 1 250 425 150 +150 +150
mA A mW mW °C °C °C
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
300 Ptot (mW) 200
001aaa823
100
0 0 40 80 120 160 Tamb (°C)
Fig 1. Power derating curve.
9397 750 12702
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 29 April 2004
3 of 12
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