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Details, datasheet, quote on part number:PBSS4160V
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| Part: | PBSS4160V |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | 60 V, 1 a NPN Low Vcesat (BISS) Transistor<<<>>>low Vcesat (BISS) NPN Transistor in a SOT666 Plastic Package. <<<>>><<<>>>Features Low Collector-emitter Saturation Voltage Vcesat <<<>>>High Collector Current Capability ic And Icm <<<>>>High Efficiency, Reduces Heat Generation <<<>>>Reduces Printed-circuit Board Area Required <<<>>>Cost Effective Replacement For Medium Power Transistor BCP55 And BCX55. <<<>>><<<>>> <<<>>> Applications Major Application Segments: <<<>>>Automotive 42 V Power <<<>>>Telecom Infrastructure <<<>>>Industrial. <<<>>>Power Management: <<<>>>DC-to-DC Conversion <<<>>>Supply Line Switching. <<<>>>Peripheral Driver <<<>>>Driver in Low Supply Voltage Applications (e.g. Lamps And LEDs) <<<>>>Inductive Load Driver (e.g. Relays, Buzzers And Motors). |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS4160V datasheet File size : 96 kB |
| Request For quote: | Find where to buy PBSS4160V
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Datasheet text preview:
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 -- 23 April 2004 Objective data sheet
1. Product profile
1.1 General description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V.
1.2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55.
1.3 Applications
s Major application segments: x Automotive 42 V power x Telecom infrastructure x Industrial. s Power management: x DC-to-DC conversion x Supply line switching. s Peripheral driver x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors).
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max 60 1 2 250 Unit V A A m
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2: Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter
6 5 4
Simplified outline
Symbol
1, 2, 5, 6 3 4
sym014
1 Top view
2
3
3. Ordering information
Table 3: Ordering information Package Name PBSS4160V Description plastic surface mounted package; 6 leads Version SOT666 Type number
4. Marking
Table 4: Marking Marking code [1] *41 Type number PBSS4160V
[1] Made in Hong Kong.
5. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation Tamb 25 °C
[3] [1] [2]
Conditions open base open collector
[1] [2]
Min -
Max 80 60 5 0.9 1 2 300 1 300 500
Unit V V V A A mA A mW mW
collector-base voltage open emitter
t = 1 ms or limited by Tj(max)
9397 750 12884
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 23 April 2004
2 of 12
Philips Semiconductors
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Table 5: Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg
[1] [2] [3]
Parameter junction temperature operating ambient temperature storage temperature
Conditions
Min -65 -65
Max 150 +150 +150
Unit °C °C °C
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. tp 300 µs; 0.02 in the peak base current (IBM) conditions.
0.6 Ptot (W)
(1)
001aaa714
0.4
(2)
0.2
0 0 40 80 120 160 Tamb (°C)
(1) FR4 PCB; 1 cm2 collector mounting pad. (2) FR4 PCB; standard footprint.
Fig 1. Power derating curves.
6. Thermal characteristics
Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2]
Typ 415 250
Unit K/W K/W
[1] [2]
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
9397 750 12884
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Objective data sheet
Rev. 01 -- 23 April 2004
3 of 12
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