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Details, datasheet, quote on part number:PBSS4230T
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor
Product specification 2003 Sep 29
Philips Semiconductors
Product specification
30 V, 2 A NPN low VCEsat (BISS) transistor
FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High efficiency leading to less heat generation · Reduced printed-circuit board requirements · Cost effective alternative to MOSFETs in specific applications. APPLICATIONS · Power management DC/DC conversion Supply line switching Battery charger LCD backlighting. · Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. MARKING TYPE NUMBER PBSS4230T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4230T - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *3D
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Top view
PBSS4230T
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 30 2 3 200 UNIT V A A m
handbook, halfpage
3 3 1 2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION SOT23
2003 Sep 29
2
Philips Semiconductors
Product specification
30 V, 2 A NPN low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 Tamb 25 °C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN.
PBSS4230T
MAX. 40 30 5 2 3 300 300 480 +150 150 +150 V V V A A
UNIT
mA mW mW °C °C °C
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 Notes 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. VALUE 417 260 UNIT K/W K/W
2003 Sep 29
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