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Details, datasheet, quote on part number:PBSS4240DPN
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4240DPN 40 V low VCEsat NPN/PNP transistor
Product specification 2003 Feb 20
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High collector current gain hFE at high IC · High efficiency leading to reduced heat generation · Reduced printed-circuit board area requirements. APPLICATIONS · Power management: Complementary MOSFET driver Dual supply line switching. · Peripheral driver: Half and full bridge motor drivers Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. MARKING TYPE NUMBER PBSS4240DPN MARKING CODE M3 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector VCEO IC ICRP ICM RCEsat emitter-collector voltage QUICK REFERENCE DATA
PBSS4240DPN
MAX. SYMBOL PARAMETER NPN PNP 40 1.35 2 3 200 -40 -1.1 -2 -3 260 V A A A m UNIT
collector current (DC) repetitive peak collector current peak collector current equivalent on-resistance
DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
6 handbook, halfpage
5
4
6
5
4
TR2 TR1
1 Top view
2
3
MAM445
1
2
3
Fig.1
Simplified outline SOT457 (SC-74) and symbol.
2003 Feb 20
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS - - - - - - note 1 single peak - - - - Tamb 25 °C; note 2 Tamb 25 °C; note 3 Tamb 25 °C; note 1 Tstg Tj Tamb Per device Ptot Notes total power dissipation Tamb 25 °C; note 2 - storage temperature junction temperature operating ambient temperature - - - -65 - -65
PBSS4240DPN
MIN.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) NPN PNP ICRP ICM IB IBM Ptot repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation open emitter open base open collector 40 40 5 1.35 -1.1 2 3 300 1 370 310 1.1 +150 150 +150 V V V A A A A mA A mW mW W °C °C °C mW
600
1. Operated under pulsed conditions: duty cycle 20%; pulse width tp 10 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL Per transistor Rth j-a thermal resistance from junction to ambient in free air; note 1 in free air; note 2 340 110 K/W K/W PARAMETER CONDITIONS VALUE UNIT
Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Operated under pulsed conditions: pulse width tp 10 ms; duty cycle 0.20; mounting pad for collector standard footprint.
2003 Feb 20
3
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