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Details, datasheet, quote on part number:PBSS4240V
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4240V 40 V low VCEsat NPN transistor
Product specification 2003 Jan 30
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES · Low collector-emitter saturation voltage VCEsat · High collector current capability IC and ICM · High collector current gain (hFE) at high IC · High efficiency leading to reduced heat generation · Reduced printed-circuit board area requirements. APPLICATIONS · Power management: DC-DC converter Supply line switching Battery charger LCD back lighting. · Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relay, buzzers and motors). DESCRIPTION NPN transistor providing low VCEsat and high current capability in a SOT666 plastic package. PNP complement: PBSS5240V.
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PBSS4240V
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 2 2 <190 UNIT V A A m
handbook, halfpage
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MARKING TYPE NUMBER PBSS4240V MARKING CODE 42
Top view
MAM444
Fig.1 Simplified outline (SOT666) and symbol.
2003 Jan 30
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Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRP ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation Tamb 25 °C; note 3 Tamb 25 °C; note 4 Tamb 25 °C; note 1 Tamb 25 °C; notes 2 and 3 Tstg Tj Tamb Notes 1. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 2. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector note 1 note 2 - - - - - - - - - - - - -65 - -65 MIN.
PBSS4240V
MAX. 40 40 5 2 2 3 300 1 300 500 900 1.2 +150 150 +150 V V V A A A
UNIT
mA A mW mW mW W °C °C °C
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 note 3 notes 1 and 4 Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 3. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 4. Operated under pulsed conditions: duty cycle 20%, pulse width tp 30 ms. Soldering The only recommended soldering method is reflow soldering. CONDITIONS VALUE 410 215 140 110 UNIT K/W K/W K/W K/W
2003 Jan 30
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