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Details, datasheet, quote on part number:PBSS4240Y
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| Part: | PBSS4240Y |
| Category: | Discrete => Transistors => Bipolar => Low VCE(sat) |
| Description: | PBSS4240Y; 40 V Low Vcesat NPN Transistor;; Package: SOT363 (UMT6) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PBSS4240Y datasheet File size : 54 kB |
| Request For quote: | Find where to buy PBSS4240Y
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
age
MBD128
PBSS4240Y 40 V low VCEsat NPN transistor
Product specification 2001 Jul 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
FEATURES · Low collector-emitter saturation voltage · High current capability · Improved device reliability due to reduced heat generation · Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS · Supply line switching circuits · Battery management applications · DC/DC converter applications · Strobe flash units · Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. MARKING TYPE NUMBER PBSS4240Y Note 1. * = p: made in Hongkong. * = t: made in Malaysia. 42* Fig.1 MARKING CODE(1)
1 2 Top view 3
handbook, halfpage
PBSS4240Y
QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 40 3 <200 UNIT V A m
6
5
4 1, 2, 5, 6 3 4
MAM441
Simplified outline (SOT363; SC-88) and symbol.
2001 Jul 13
2
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 Tamb 25 °C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN.
PBSS4240Y
MAX. 40 40 5 2 3 300 270 430 +150 150 +150 V V V A A
UNIT
mA mW mW °C °C °C
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 463 291 UNIT K/W K/W
Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
2001 Jul 13
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