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Details, datasheet, quote on part number:PBSS4250X
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS4250X 50 V, 2 A NPN low VCEsat (BISS) transistor
Objective specification 2003 Jun 17
Philips Semiconductors
Objective specification
50 V, 2 A NPN low VCEsat (BISS) transistor
FEATURES · SOT89 (SC-62) package · Low collector-emitter saturation voltage VCEsat · High collector current capability: IC and ICM · Higher efficiency leading to less heat generation · Reduced printed-circuit board requirements. APPLICATIONS · Power management DC/DC converters Supply line switching Battery charger LCD backlighting. · Peripheral drivers Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5250X. MARKING TYPE NUMBER PBSS5250X Note 1. * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China. MARKING CODE(1) *1M
1 Bottom view 2 3
handbook, halfpage
PBSS4250X
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 50 2 5 160 UNIT V A A m
2 3 1
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
2003 Jun 17
2
Philips Semiconductors
Objective specification
50 V, 2 A NPN low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage continuous collector current (DC) peak collector current continuous base current (DC) total power dissipation Tamb 25 °C note 1 note 2 Tj Tamb Tstg Notes junction temperature operating ambient temperature storage temperature - - - -65 -65 Tj max CONDITIONS open emitter open base open collector - - - - - - MIN.
PBSS4250X
MAX. 50 50 5 2 5 0.5 550 1 150 +150 +150 V V V A A A
UNIT
mW W °C °C °C
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 Rth-js Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. thermal resistance from junction to soldering point 225 125 16 K/W K/W K/W VALUE UNIT
2003 Jun 17
3
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