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Part: PBYL1520CT
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
-> <5 AMP
Description: Rectifier Diodes Schottky Barrier
Company: Philips Semiconductors
Datasheet: Download PBYL1520CT datasheet File size : 140 kB
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Datasheet text preview:
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
· Low forward volt drop · Fast switching · Reverse surge capability · High thermal cycling performance · Low thermal resistance
PBYL1525CT, PBYL1525CTB series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 15 A VF 0.42 V
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL1525CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL15 PBYL15 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb 107 °C square wave; = 0.5; Tmb 127 °C square wave; = 0.5; Tmb 127 °C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 °C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 20 20 20 15 15 90 100 1 150 175 25CT 25CTB 25 25 25 UNIT
V V V A A A A A °C °C
IRRM Tj Tstg
1. It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL1525CT, PBYL1525CTB series
MIN. -
TYP. MAX. UNIT 60 50 3 2.5 K/W K/W K/W K/W
per diode both diodes SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 °C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 7.5 A; Tj = 150°C IF = 7.5 A; Tj = 125°C IF = 15 A; Tj = 125°C IF = 15 A VR = VRWM VR = VRWM; Tj = 100°C VR = 5 V; f = 1 MHz, Tj = 25°C to 125°C MIN. TYP. MAX. UNIT 0.37 0.39 0.57 0.59 0.2 10 350 0.42 0.45 0.61 0.64 5 20 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL1525CT, PBYL1525CTB series
8 7 6 5 4 3
Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.0213 Ohms
PBYL1525CT
Tmb(max) / C
126 129
100mA
Reverse current, IR (A)
PBYR1045CTD
D = 1.0 0.2 0.1
I tp D= tp T t
132 135 138 141 144 147 150 12
10mA 125 C 100 C 1mA 75 C 50 C 100uA Tj = 25 C
0.5
2 1 0
T
0
2
4 6 8 Average forward current, IF(AV) (A)
10
10uA 0
25 Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PBYL1525CT 1.9 138
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
5 4
Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.0213 Ohms 4
Tmb(max) / C a = 1.57
135
1000
Junction capacitance, Cd (pF)
PBYR1025CTD
2.2 2.8
3 2 1 0
141 144 147 150
100
0
1
2 3 4 5 6 Average forward current, IF(AV) (A)
7
8
1
10 Reverse voltage, VR (V)
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Forward current, IF (A) Tj = 25 C Tj = 125 C 8 typ max PBYR1025CTD
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25°C to 125 °C.
10
10
Transient thermal impedance, Zth j-mb (K/W)
1
6
0.1
4
0.01
2
P D
tp
D=
tp T t
0
0
0.2
0.4 0.6 Forward voltage, VR (V)
0.8
1
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; per diode; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Others parts begin by pb
PB-1 PB-2 PB-3 PB-4 PB-5 PB-6 PB-7
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