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Part: PBYL1625
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
Description: PBYL1625 Series; Rectifier Diodes Schottky Barrier
Company: Philips Semiconductors
Datasheet: Download PBYL1625 datasheet File size : 140 kB
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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
· Low forward volt drop · Fast switching · Reverse surge capability · High thermal cycling performance · Low thermal resistance
PBYL1625 series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V
k 1
a 2
IF(AV) = 16 A VF 0.46 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1625 series is supplied in the SOD59 (TO220AC) conventional leaded package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL16 Tmb 120 °C square wave; = 0.5; Tmb 131 °C square wave; = 0.5; Tmb 131 °C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 °C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20 20 20 20 16 32 135 150 1 150 175 MAX. 25 25 25 25 UNIT V V V A A A A A °C °C
IRRM Tj Tstg
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL1625 series
MIN. -
TYP. MAX. UNIT 60 2 K/W K/W
in free air
-
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 16 A; Tj = 125°C IF = 32 A; Tj = 125°C IF = 32 A VR = VRWM VR = VRWM; Tj = 100°C VR = 5 V; f = 1 MHz, Tj = 25°C to 125°C MIN. TYP. MAX. UNIT 0.42 0.57 0.55 1 22 700 0.46 0.61 0.68 5 40 V V V mA mA pF
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL1625 series
15
Forward dissipation, PF (W)
Vo = 0.32 V Rs = 0.009 Ohms
PBYL1625
Tmb(max) / C D = 1.0
120
1A
IR / A Tj = 150 C
PBYR2025CT
100mA 125
10 0.2 0.1
0.5
130
10mA 100 75 50 100uA
T t
1mA
5
I
tp
D=
tp T
140
25
0
0
5 10 15 20 Average forward current, IF(AV) (A)
150 25
10uA
0
5
10 VR / V
15
20
25
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
12 10
Forward dissipation, PF (W) PBYL1625
Vo = 0.32 V Rs = 0.009 Ohms
Tmb(max) / C a = 1.57 2.2 1.9
126 130 134 138 142 146
10000
Cd / pF
PBYR2025CT
8 4 6 4 2 0
2.8
1000
0
5 10 Average forward current, IF(AV) (A)
150 15
100
1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25°C to 125 °C.
30 25 20 15 10
IF / A typ Tj = 25 C Tj = 125 C max
PBYR2025CT
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
P D
tp
D=
tp T t
5 0
0.001 1us
T
0
0.2
0.4 VF / V
0.6
0.8
1
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1625
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Others parts begin by pb
PB-1 PB-2 PB-3 PB-4 PB-5 PB-6 PB-7
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