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Part: PBYL2520CT
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Barrier Rectifiers
-> <5 AMP
Description: Rectifier Diodes Schottky Barrier
Company: Philips Semiconductors
Datasheet: Download PBYL2520CT datasheet File size : 140 kB
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Datasheet text preview:
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
· Low forward volt drop · Fast switching · Reverse surge capability · High thermal cycling performance · Low thermal resistance
PBYL2525CT, PBYL2525CTB series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 25 A VF 0.43 V
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL2525CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL25 PBYL25 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb 120 °C square wave; = 0.5; Tmb 119 °C square wave; = 0.5; Tmb 119 °C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 °C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 20 20 20 25 25 135 150 1 150 175 25CT 25CTB 25 25 25 UNIT
V V V A A A A A °C °C
IRRM Tj Tstg
1. It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL2525CT, PBYL2525CTB series
MIN. -
TYP. MAX. UNIT 60 50 3 2 K/W K/W K/W K/W
per diode both diodes SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 °C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 12.5 A; Tj = 150°C IF = 12.5 A; Tj = 125°C IF = 25 A; Tj = 125°C IF = 25 A VR = VRWM VR = VRWM; Tj = 100°C VR = 5 V; f = 1 MHz, Tj = 25°C to 125°C MIN. TYP. MAX. UNIT 0.36 0.38 0.5 0.54 1 20 600 0.43 0.47 0.62 0.66 5 30 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL2525CT, PBYL2525CTB series
12 10 8
Forward dissipation, PF (W)
Vo = 0.320 V Rs = 0.012 Ohms
PBYL2525CT Tmb(max) / C D = 1.0 0.5
114 120 126
1A
IR / A
PBYR1525CT
100mA
Tj = 150 C 125
0.2 6 4 2 0
T t
10mA
100 75 50
0.1
132
1mA
I
tp
tp D= T
138 144 150 20
100uA
25
0
5 10 15 Average forward current, IF(AV) (A)
10uA
0
5
10 VR / V
15
20
25
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
10 8
Forward dissipation, PF (W)
Vo = 0.32 V Rs = 0.012 Ohms
PBYL2525CT
Tmb(max) / C
120 126
10000
Cd / pF
PBYR1525CT
2.2 6 4 2 0 2.8 4
1.9
a = 1.57
132
1000
138
144 150 12
0
2
4 6 8 10 Average forward current, IF(AV) (A)
100
1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
IF / A Tj = 25 C Tj = 125 C typ PBYR1525CT max
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25°C to 125 °C.
30 25 20 15 10
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
5 0
P D
tp
D=
tp T t
0
0.2
0.4 VF / V
0.6
0.8
1
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR2525CT
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp).
March 1998
3
Rev 1.000
Others parts begin by pb
PB-1 PB-2 PB-3 PB-4 PB-5 PB-6 PB-7
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