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Part: PDTC114EE
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
-> SOT/Surface Mount
Description: NPN Resistor-equipped Transistor
Company: Philips Semiconductors
Datasheet: Download PDTC114EE datasheet File size : 77 kB
Request For quote: Find where to buy PDTC114EE
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTC114EE NPN resistor-equipped transistor
Product specification Supersedes data of 1998 Nov 26 1999 May 18
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of external resistors.
1 2
handbook, halfpage
PDTC114EE
PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION
3 R1 1 R2
3
2
MAM346
DESCRIPTION NPN resistor-equipped transistor in an SC-75 plastic package. PNP complement: PDTA114EE. MARKING TYPE NUMBER PDTC114EE MARKING CODE 09
Top view
Fig.1 Simplified outline (SC-75) and symbol.
1 2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 May 18 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 - - - - - -65 - -65 +40 -10 100 100 150 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector - - - MIN. MAX. 50 50 10 V V V UNIT
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 0.3 V MIN. - - - - 30 - - 2.5 7 0.8 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
PDTC114EE
VALUE 833
UNIT K/W
TYP. - - - - - - 1.1 1.8 10 1 -
MAX. 100 1 50 400 - 150 0.8 - 13 1.2 2.5
UNIT nA µA µA µA mV V V k
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
pF
1999 May 18
3
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