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Part: PDTC114EK
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
-> SOT/Surface Mount
Description: NPN Resistor-equipped Transistor
Company: Philips Semiconductors
Datasheet: Download PDTC114EK datasheet File size : 77 kB
Request For quote: Find where to buy PDTC114EK
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PDTC114EK NPN resistor-equipped transistor
Product specification Supersedes data of 1998 May 19 1998 Nov 26
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-59 plastic package. PNP complement: PDTA114EK.
1 3 2
MGA893 - 1
PDTC114EK
3 3 R1 1 R2 2 1 Top view 2
MAM284
Fig.1 Simplified outline (SC-59) and symbol.
MARKING TYPE NUMBER PDTC114EK MARKING CODE 04
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VC E O IO IC M Pt o t hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base - - - - 30 7 0.8 MIN. - - - - - 10 1 TYP. MAX. 50 100 100 250 - 13 1.2 k UNIT V mA mA mW
1998 Nov 26
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC B O VC E O VE B O VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO IC M Pt o t Ts t g Tj Ta m b Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IC E O IE B O hFE VC E s a t Vi ( o f f ) Vi ( o n ) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 0.3 V MIN. - - - - 30 - - 2.5 7 0.8 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 - - - - - -65 - -65 CONDITIONS open emitter open base open collector - - - MIN.
PDTC114EK
MAX. 50 50 10 +40 -10 100 100 250 +150 150 +150 V V V V V
UNIT
mA mA mW °C °C °C
VALUE 500
UNIT K/W
TYP. - - - - - - 1.1 1.8 10 1 -
MAX. 100 1 50 400 - 150 0.8 - 13 1.2 2.5
UNIT nA µA µA µA mV V V k
pF
1998 Nov 26
3
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