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Details, datasheet, quote on part number:PDTC114TK
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| Part: | PDTC114TK |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => SOT/Surface Mount |
| Description: | NPN Resistor-equipped Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PDTC114TK datasheet File size : 54 kB |
| Request For quote: | Find where to buy PDTC114TK
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PDTC114TK NPN resistor-equipped transistor
Product specification Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04 1998 May 19
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES · Built-in bias resistor R1 (typ. 10 k) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit configurations without use of an external resistor. DESCRIPTION NPN resistor-equipped transistor in an SC-59 plastic package. PNP complement: PDTA114TK.
1 3 2
handbook, halfpage
PDTC114TK
3
3 R1 1 2
1 Top view
2
MAM290
Fig.1 Simplified outline (SC-59) and symbol.
MARKING TYPE NUMBER PDTC114TK MARKING CODE 24
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VC E O IO IC M Pt o t hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb 25 °C IC = 1 mA; VCE = 5 V CONDITIONS open base - - - - 200 7 MIN. - - - - - 10 TYP. MAX. 50 100 100 250 - 13 k UNIT V mA mA mW
1998 May 19
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VC B O VC E O VE B O IO IC M Pt o t Ts t g Tj Ta m b Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IC E O IE B O hFE VC E s a t R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input resistor collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 1 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA MIN. - - - - 200 - 7 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - -65 MIN.
PDTC114TK
MAX. 50 50 5 100 100 250 +150 150 +150 V V V
UNIT
mA mA mW °C °C °C
UNIT K/W
TYP. - - - - - - 10 -
MAX. 100 1 50 100 - 150 13 2.5
UNIT nA µA µA nA mV k pF
1998 May 19
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