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Part: PHB2N50
Category:
Description: PHB2N50; Powermos Transistor
Company: Philips Semiconductors
Datasheet: Download PHB2N50 datasheet File size : 228 kB
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Philips Semiconductors
Product specification
PowerMOS transistor
PHB2N50
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 500 2 50 5 UNIT V A W
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD PD/Tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C Tmb = 25 °C Tmb > 25 °C VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V MIN. - 55 MAX. 2 1.3 8 50 0.4 ± 30 100 2 150 UNIT A A A W W/K V mJ A °C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. pcb mounted, minimum footprint 50 MAX. 2.5 UNIT K/W K/W
June 1997
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHB2N50
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL V(BR)DSS V(BR)DSS / Tj RDS(ON) VGS(TO) gfs IDSS IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss PARAMETER Drain-source breakdown voltage Drain-source breakdown voltage temperature coefficient Drain-source on resistance Gate threshold voltage Forward transconductance Drain-source leakage current Gate-source leakage current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA VGS = 10 V; ID = 1 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 1 A VDS = 500 V; VGS = 0 V VDS = 400 V; VGS = 0 V; Tj = 125 °C VGS = ±30 V; VDS = 0 V ID = 2 A; VDD = 400 V; VGS = 10 V MIN. 500 2.0 0.5 TYP. 0.6 3.1 3.0 1.3 1 30 10 20 2 12 10 20 60 20 3.5 4.5 7.5 236 40 22 MAX. 5 4.0 25 250 200 25 3 15 UNIT V V/K V S µA µA nA nC nC nC ns ns ns ns nH nH nH pF pF pF
VDD = 250 V; ID = 2 A; RG = 24 ; RD = 120
Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL IS ISM VSD trr Qrr PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tmb = 25°C Tmb = 25°C IS = 2 A; VGS = 0 V IS = 2 A; VGS = 0 V; dI/dt = 100 A/µs MIN. TYP. 300 2.1 MAX. 2 8 1.2 UNIT A A V ns µC
June 1997
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHB2N50
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1E+01
Zth j-mb / (K/W) D= 0.5 0.2 0.1 0.05
1E+00
1E-01
0.02 0
P D
tp
D=
tp T t 1E+01
0
20
40
60
80 100 Tmb / C
120
140
1E-02 1E-07
T 1E-05 1E-03 t/s 1E-01
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
PHP2N50
120 110 100 90 80 70 60 50 40 30 20 10 0
6 5 4 3 2
ID, Drain current (Amps) Tj = 25 C
20 V 10 V 7V 6.5 V 6V
1 0
5.5 V VGS = 5 V
0
20
40
60
80 Tmb / C
100
120
140
0
5
10 15 20 VDS, Drain-Source voltage (Volts)
25
30
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Tmb); conditions: VGS 10 V
PHP2N50
10
tp = 10 us
Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS
10
Drain current, ID (Amps) Tmb = 25 C
RD
1
N S(O
)=
VD
D S/I
Drain-Source on resistance, RDS(ON) (Ohms) 5V 5.5 V 6 V 6.5 V 7V
PHP2N50 Tj = 25 C
8
100us
6
1 ms
10 V 4 VGS = 20 V
DC 0.1
10 ms 100ms
2
0.01 10
100 Drain-source voltage, VDS (Volts)
1000
0
0
1
2 3 Drain current, ID (Amps)
4
5
Fig.3. Safe operating area. Tmb = 25 °C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS
June 1997
3
Rev 1.000
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