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Details, datasheet, quote on part number:PHB30NQ15T
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| Part: | PHB30NQ15T |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | PHP30NQ15T; PHB30NQ15T; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT78 (TO-220AB, SC-46) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHB30NQ15T datasheet File size : 296 kB |
| Request For quote: | Find where to buy PHB30NQ15T
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Datasheet text preview:
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
Rev. 02 -- 12 March 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP30NQ15T in SOT78 (TO-220AB) PHB30NQ15T in SOT404 (D2-PAK).
2. Features
s Fast switching s Low on-state resistance.
3. Applications
s DC to DC converters s Switched mode power supplies.
c
4. Pinning information
c
Table 1: Pin 1 2 3 mb
Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g)
mb mb
Simplified outline
Symbol
drain (d) source (s) drain (d)
[1]
d
g 2 1
MBK106
3
MBK116
MBB076
s
123
SOT78 (TO-220AB)
[1] 1.
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 15 A Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C Typ - - - - - Max 150 29 150 175 63 Unit V A W °C m
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IS ISM EAS IAS peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs non-repetitive avalanche energy non-repetitive avalanche current unclamped inductive load; IAS = 26 A; tp = 0.2 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C; Figure 4 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions Tj = 25 to 175 °C Tj = 25 to 175 °C; RGS = 20 k Min - - - - - - - -55 -55 - - - - Max 150 150 ±20 29 20 116 150 +175 +175 29 116 502 29 Unit V V V A A A W °C °C A A mJ A
Source-drain diode
Avalanche ruggedness
9397 750 08037
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
2 of 14
Philips Semiconductors
PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
120 Pder
(%)
03aa16
03aa24
120
Ider (%)
100
100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 10 V ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) 102
003aaa055
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
102 IAS
003aaa054
RDSon = VDS/ ID tp = 10 µs
(A) 25 oC
10
10
100 µs 1 ms D.C. Tj prior to avalanche = 150 oC
1
10 ms 100 ms
1
10-1 1 10 102 VDS (V) 103
10-1 10-3 10-2 10-1 1 tp (ms) 10
Tmb = 25 °C; IDM is single pulse.
Unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C and 150 °C.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration.
9397 750 08037
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 02 -- 12 March 2001
3 of 14
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