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Part: PHB32N06LT
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP32N06LT; PHB32N06LT; N-channel Enhancement Mode Field Effect Transistor;; Package: SOT78 (TO-220AB, SC-46)
Company: Philips Semiconductors
Datasheet: Download PHB32N06LT datasheet File size : 228 kB
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Datasheet text preview:
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Rev. 01 -- 06 November 2001 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK).
2. Features
s TrenchMOSTM technology s Logic level compatible.
3. Applications
s General purpose switching s Switched mode power supplies.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO-220AB), SOT404 (D2-PAK), simplified outline and symbol Description gate (g)
mb mb d
Simplified outline
Symbol
drain (d) source (s) mounting base; connected to drain (d)
[1]
g s
MBB076
2 1
MBK106
3
MBK116
123
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 20 A Tj = 25 °C; VGS = 4.5 V; ID = 20 A Typ 30 Max 60 34 97 175 40 43 Unit V A W °C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM WDSS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) non-repetitive gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 20 A; tp = 0.11 ms; VDS 25 V; VGS = 5 V; RGS = 50 ; starting Tj = 25 °C tp 50 µs Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 k Conditions Min -55 -55 Max 60 60 ±15 ±20 34 24 136 97 +175 +175 34 136 100 Unit V V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness
9397 750 09024
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 06 November 2001
2 of 13
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
120 Pder (%) 80
03aa16
120 I der (%)
03aa24
80
40
40
0 0 50 100 150 200 o Tmb ( C)
0 0 50 100 150 200 o Tmb ( C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 4.5 V ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A) RDSon = VDS / ID
03ah48
102
tp = 10 µs
100 µs
10 DC 1 ms
10 ms 1 1 10 VDS (V) 102
Tamb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09024
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 06 November 2001
3 of 13
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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