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Details, datasheet, quote on part number:PHB37N06T
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| Part: | PHB37N06T |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | PHB37N06T; Trenchmos (tm) Transistor Standard Level Fet |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHB37N06T datasheet File size : 58 kB |
| Request For quote: | Find where to buy PHB37N06T
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Datasheet text preview:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB37N06T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 37 100 175 35 UNIT V A W °C m
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 °C Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 55 55 20 37 26 148 100 175 UNIT V V V A A A W °C
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 1.5 UNIT K/W K/W
December 1997
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
STATIC CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 175°C Tj = -55°C VDS = 55 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V Tj = 175°C Tj = 175°C Tj = 175°C MIN. 55 50 2.0 1.0 16 TYP. 3.0 0.05 0.04 28 -
PHB37N06T
MAX. 4.0 4.4 10 500 1 20 35 74
UNIT V V V V µA µA µA µA V m m
Gate source breakdown voltage IG = ±1 mA; Drain-source on-state VGS = 10 V; ID = 17 A resistance
DYNAMIC CHARACTERISTICS
Tmb = 25°C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 15 A ID = 30 A; VDD = 44 V; VGS = 10 V MIN. 4 TYP. 26 7.5 11 700 200 100 11 35 25 22 2.5 7.5 MAX. 880 40 140 16 50 35 29 UNIT S nC nC nC pF pF pF ns ns ns ns nH nH
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 15 A; VGS = 10 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 34 A; VGS = 0 V IF = 34 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V TYP. 0.95 1.0 40 0.16 MAX. 37 148 1.2 UNIT A A V ns µC
December 1997
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 20 A; VDD 25 V; VGS = 10 V; RGS = 50 ; Tmb = 25 °C MIN. TYP. -
PHB37N06T
MAX. 45
UNIT mJ
December 1997
3
Rev 1.100
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