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Part: PHB38N02LT
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHB/PHD38N02LT; Trenchmos (tm) Logic Level FET;; Package: SOT404 (D2-PAK)
Company: Philips Semiconductors
Datasheet: Download PHB38N02LT datasheet File size : 87 kB
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Datasheet text preview:
PHB/PHD38N02LT
TrenchMOSTM logic level FET
Rev. 01 -- 30 June 2003 Product data
1. Product profile
1.1 Description
N-channel logic level field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK).
1.2 Features
s Low on-state resistance s 2.5 V gate drive.
1.3 Applications
s Linear regulator for DDR memory.
1.4 Quick reference data
s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon 16 m
2. Pinning information
Table 1: 1 2 3 mb Pinning - SOT404 and SOT428 simplified outlines and symbol Simplified outline
[1]
mb
Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
mb
d
g s
MBB076
2 1 Top view 3
MBK091
2 1 3
MBK116
SOT428 (D-PAK)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOSTM logic level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 175 25 °C Tj 175
oC oC;
Min RGS = 20 k -55 -55 -
Max 20 20 12 44.7 31.6 179 57.6 +175 +175 44.7 179
Unit V V V A A A W °C °C A A
Source-drain diode
9397 750 11614
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 30 June 2003
2 of 13
Philips Semiconductors
PHB/PHD38N02LT
TrenchMOSTM logic level FET
120 P der (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A) Limit RDSon = VDS /ID 102 tp = 10 µ s
03al23
100 µ s
10 DC
1 ms
10 ms
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM is single pulse; VGS = 5 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11614
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 30 June 2003
3 of 13
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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