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Part: PHB45N03LTA
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHP/PHB/PHD45N03LTA; Trenchmos (tm) Logic Level FET;; Package: SOT404 (D2-PAK)
Company: Philips Semiconductors
Datasheet: Download PHB45N03LTA datasheet File size : 87 kB
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Datasheet text preview:
PHP/PHB/PHD45N03LTA
TrenchMOSTM logic level FET
Rev. 03 -- 2 October 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s Computer motherboard high frequency DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline
mb mb mb
Pin Description 1 2 3 mb gate (g)
Symbol
d
drain (d) source (s) mounting base, connected to drain (d)
[1]
g s
MBB076
2 2 1
MBK106
1 3
MBK116
3
MBK091
Top view
123
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD45N03LTA
TrenchMOSTM logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C Tj 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C VGS = 3.5 V; ID = 5.2 A; Tj = 25 °C Typ 13 17.5 22 Max 25 40 65 175 21 24 40 Unit V A W °C m m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 20 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 °C; Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 175 °C 25 °C Tj 175 °C; RGS = 20 k Min -55 -55 Max 25 25 ±20 40 30 160 65 +175 +175 40 160 40 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 10194
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 2 October 2002
2 of 14
Philips Semiconductors
PHP/PHB/PHD45N03LTA
TrenchMOSTM logic level FET
120 P der (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A) Limit RDSon = VDS / ID 102 tp = 10 µs
03af58
100 µs
10
DC
1 ms
10 ms
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10194
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 2 October 2002
3 of 14
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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