|
|
Part: PHB45N03T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Trenchmos (tm) Transistor Standard Level Fet
Company: Philips Semiconductors
Datasheet: Download PHB45N03T datasheet File size : 87 kB
Request For quote: Find where to buy PHB45N03T
Datasheet text preview:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB45N03T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 45 86 175 24 UNIT V A W °C m
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tmb = 25 °C Tmb = 100 °C Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 30 30 20 45 36 180 86 175 UNIT V V V A A A W °C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS pcb mounted, minimum footprint TYP. 50 MAX. 1.75 UNIT K/W K/W
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV
December 1997
1
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
STATIC CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 175°C Tj = -55°C VDS = 30 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V Tj = 175°C Tj = 175°C Tj = 175°C MIN. 30 27 2.0 1.0 16 TYP. 3.0 0.05 0.02 20 -
PHB45N03T
MAX. 4.0 4.4 10 500 1 20 24 45
UNIT V V V V µA µA µA µA V m m
Gate source breakdown voltage IG = ±1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance
DYNAMIC CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A ID = 40 A; VDD = 24 V; VGS = 10 V MIN. 6 TYP. 12 20 4 8 740 270 130 16 30 35 25 3.5 4.5 7.5 MAX. 22 60 50 38 UNIT S nC nC nC pF pF pF ns ns ns ns nH nH nH
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 15 V; ID = 25 A; VGS = 10 V; RG = 5 Resistive load Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 40 A; VGS = 0 V IF = 40 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V TYP. 0.95 1.0 62 0.1 MAX. 45 180 1.2 UNIT A A V ns µC
December 1997
2
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 25 A; VDD 25 V; VGS = 10 V; RGS = 50 ; Tmb = 25 °C MIN. TYP. -
PHB45N03T
MAX. 60
UNIT mJ
December 1997
3
Rev 1.200
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
|
|
|
