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Part: PHB45NQ10T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHB45NQ10T; PHP45NQ10T; PHW45NQ10T; N-channel Trenchmos (tm) Transistor;; Package: SOT404 (D2-PAK)
Company: Philips Semiconductors
Datasheet: Download PHB45NQ10T datasheet File size : 87 kB
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Datasheet text preview:
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHB45NQ10T, PHP45NQ10T PHW45NQ10T
QUICK REFERENCE DATA
d
FEATURES
· 'Trench' technology · Very low on-state resistance · Fast switching · Low thermal resistance
SYMBOL
VDSS = 100 V ID = 47 A
g
RDS(ON) 25 m
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. Applications:· d.c. to d.c. converters · switched mode power supplies The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D2PAK)
tab
SOT429 (TO247)
gate drain1 source
2
drain
1 23
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 °C to 175°C Tj = 25 °C to 175°C; RGS = 20 k Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 100 100 ± 20 47 33 188 150 175 UNIT V V V A A A W °C
1 It is not possible to make connection to pin 2 of the SOT404 package. August 1999 1 Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHB45NQ10T, PHP45NQ10T PHW45NQ10T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 40 A; tp = 100 µs; Tj prior to avalanche = 25°C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:15 MIN. MAX. 260 UNIT mJ
IAS
-
47
A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT429 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT 60 45 50 1 K/W K/W K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 175°C Tj = -55°C Drain-source on-state VGS = 10 V; ID = 25 A resistance Gate source leakage current VGS = ±10 V; VDS = 0 V Zero gate voltage drain VDS = 100 V; VGS = 0 V; current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance Tj = 175°C Tj = 175°C MIN. 100 89 2 1 TYP. MAX. UNIT 3 22 0.02 0.05 61 13 25 18 72 69 58 3.5 4.5 7.5 2600 340 195 4 6 25 68 100 10 500 V V V V V m m nA µA µA nC nC nC ns ns ns ns nH nH nH pF pF pF
ID = 45 A; VDD = 80 V; VGS = 10 V
VDD = 50 V; RD = 1.8 ; VGS = 10 V; RG = 5.6 Resistive load Measured tab to centre of die Measured from drain lead to centre of die (SOT78 and SOT429 packages) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
August 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
PHB45NQ10T, PHP45NQ10T PHW45NQ10T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 20 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 25 V TYP. MAX. UNIT 0.87 82 0.26 47 188 1.2 A A V ns µC
August 1999
3
Rev 1.000
Others parts begin by ph
PH-1 PH-2 PH-3 PH-4 PH-5
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