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Part: PHKD3NQ10T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: PHKD3NQ10T; Dual N-channel Trenchmos (tm) Transistor;; Package: SOT96-1 (SO8)
Company: Philips Semiconductors
Datasheet: Download PHKD3NQ10T datasheet File size : 89 kB
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Philips Semiconductors
Product specification
Dual N-channel TrenchMOSTM transistor
PHKD3NQ10T
FEATURES
· Dual device · Low on-state resistance · Fast switching · Low profile surface mount package
SYMBOL
d1 d2
QUICK REFERENCE DATA VDS = 100 V ID = 3 A RDS(ON) 90 m (VGS = 10 V)
s2
g1 s1
g2
GENERAL DESCRIPTION
Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. Applications:· Motor and relay drivers · d.c. to d.c. converters The PHKD3NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.
PINNING
PIN 1 2 3 4 5,6 7,8 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 1
SOT96-1
8 7 6 5
pin 1 index
1
2
3
4
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Continuous drain-source voltage Drain-gate voltage Gate-source voltage Drain current per MOSFET CONDITIONS Tj = 25 °C to 150°C Tj = 25 °C to 150°C; RGS = 20 k MIN. - 65 MAX. 100 100 ± 20 3 2.4 2.2 1.7 12 2 1.3 150 UNIT V V V A A A A A W W °C
Ta = 25 °C, t 10 s Ta = 70 °C, t 10 s Drain current per MOSFET (both Ta = 25 °C, t 10 s MOSFETs conducting) Ta = 70 °C, t 10 s Drain current (pulse peak value per Ta = 25 °C MOSFET) Total power dissipation Ta = 25 °C, t 10 s Ta = 70 °C, t 10 s Storage & operating temperature
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-a Rth j-a Thermal resistance junction to ambient Thermal resistance junction to ambient CONDITIONS Surface mounted on FR4 board, t 10 sec; either or both MOSFETs conducting Surface mounted on FR4 board; either or both MOSFETs conducting TYP. 150 MAX. 62.5 UNIT K/W K/W
August 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Dual N-channel TrenchMOSTM transistor
PHKD3NQ10T
ELECTRICAL CHARACTERISTICS
Tj= 25°C, per MOSFET unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage CONDITIONS VGS = 0 V; ID = 250 µA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 150°C Tj = -55°C Drain-source on-state VGS = 10 V; ID = 1.5 A resistance Gate source leakage current VGS = ±20 V; VDS = 0 V Zero gate voltage drain VDS = 100 V; VGS = 0 V; current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 3 A; VDD = 80 V; VGS = 10 V Tj = 150°C Tj = 150°C MIN. 100 89 2 1.1 TYP. MAX. UNIT 3 70 10 0.05 21 2.5 8 6 12 20 10 2.5 5 633 103 61 4 6 90 216 100 10 100 V V V V V m m nA µA µA nC nC nC ns ns ns ns nH nH pF pF pF
VDD = 50 V; RD = 15 ; VGS = 10 V; RG = 5.6 Resistive load Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 20 V; f = 1 MHz
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C, per MOSFET unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source diode current Pulsed source diode current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Ta = 25 °C, t 10 s IF = 2 A; VGS = 0 V IF = 2 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 25 V MIN. TYP. MAX. UNIT 0.8 55 135 2 12 1.2 A A V ns nC
August 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Dual N-channel TrenchMOSTM transistor
PHKD3NQ10T
Normalised Power Derating, PD (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 Ambient temperature, Ta (C) 125 150
100
Transient thermal impedance, Zth j-a (K/W) D = 0.5
10
0.2 0.1 0.05 0.02 single pulse P D D = tp/T
1
tp
0.1 T 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Ta)
Fig.4. Transient thermal impedance. Zth j-a = f(t); parameter D = tp/T
Drain Current, ID (A) VGS = 10V 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 1.8 2 4.8 V 8V 6V Tj = 25 C 5V 5.4 V 5.2 V
Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 Ambient temperature, Ta (C) 125 150
6
4.6 V 4.4 V
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Ta); VGS 10 V
Peak Pulsed Drain Current, IDM (A)
Fig.5. Typical output characteristics, Tj = 25 °C. ID = f(VDS)
100
0.2
Drain-Source On Resistance, RDS(on) (Ohms) 4.6V 4.8V 5V 5.2 V 5.4 V 6V 8V VGS = 10V Tj = 25 C 0 1 2 3 4 Drain Current, ID (A) 5 6
RDS(on) = VDS/ ID 10
0.18
tp = 10 us 100 us 1 ms
0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02
1 10 ms D.C. 0.1 100 ms
0.01 0.1 1 10 100 Drain-Source Voltage, VDS (V) 1000
0
Fig.3. Safe operating area ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 °C. RDS(ON) = f(ID)
August 1999
3
Rev 1.000
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