|
Details, datasheet, quote on part number:PHM12NQ20T
| |
| Part: | PHM12NQ20T |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | PHM12NQ20T; Trenchmos (tm) Standard Level FET;; Package: SOT685-1 (HVSON8, QFPAK) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHM12NQ20T datasheet File size : 242 kB |
| Request For quote: | Find where to buy PHM12NQ20T
|
| |
Datasheet text preview:
PHM12NQ20T
TrenchMOSTM standard level FET
Rev. 01 -- 30 January 2003 Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PHM12NQ20T in SOT685-1 (QLPAK).
1.2 Features
s SOT96 (SO-8) footprint compatible s Surface mount package s Low thermal resistance s Low profile.
1.3 Applications
s DC-DC converter primary side switch s Por table equipment applications.
1.4 Quick reference data
s VDS 200 V s Ptot 62.5 W s ID 14.4 A s RDSon 130 m.
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685 (QLPAK), simplified outlines and symbol Description source (s) gate (g) drain (d) mounting base, connected to drain (d)
1 4 d
Simplified outline
Symbol
mb
g s
8 Bottom view
5
MBL585
MBB076
SOT685-1 (QLPAK)
[1] Shaded area indicates pin 1 identifier
Philips Semiconductors
PHM12NQ20T
TrenchMOSTM standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 150 °C 25 °C Tj 150 °C; RGS = 20 k Min -55 -55 Max 200 200 ±20 14.4 5.8 56.8 62.5 +150 +150 14.4 56 Unit V V V A A A W °C °C A A
Source-drain diode
9397 750 10876
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Preliminary data
Rev. 01 -- 30 January 2003
2 of 12
Philips Semiconductors
PHM12NQ20T
TrenchMOSTM standard level FET
120 P der (%) 80
03aa15
120 Ider (%) 80
03aa23
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
VGS 10 V
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
102 ID (A) 10 1 ms DC 1 10 ms 100 ms
003aaa354
Limit RDSon = VDS/ID
tp = 10µs
10-1
10-2 1 10 102 VDS (V) 103
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10876
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Preliminary data
Rev. 01 -- 30 January 2003
3 of 12
|
|
