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Details, datasheet, quote on part number:PHP66NQ03LT
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| Part: | PHP66NQ03LT |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | PHP/PHB/PHD66NQ03LT; Trenchmos (tm) Logic Level FET;; Package: SOT78 (TO-220AB, SC-46) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHP66NQ03LT datasheet File size : 305 kB |
| Request For quote: | Find where to buy PHP66NQ03LT
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Datasheet text preview:
PHP/PHB/PHD66NQ03LT
TrenchMOSTM logic level FET
Rev. 04 -- 9 September 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters.
4. Pinning information
Table 1: 1 2 3 mb Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline
[1]
mb mb mb
Pin Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
Symbol
d
g s
MBB076
2 2 1
MBK106
1 3
MBK116
3
MBK091
Top view
123
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
TrenchMOSTM logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C Tj 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C; VGS = 5 V total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Tmb = 25 °C Typ 9.1 12.3 Max 25 66 57 93 175 12 16 Unit V A A W °C m m drain-source voltage (DC) drain current (DC) Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR ID drain-source voltage (DC) drain-gate voltage (DC) drain current (DC) Conditions 25 °C Tj 175 °C 25 °C Tj 175 °C; RGS = 20 k Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; VGS = 10 V Tmb = 100 °C; VGS = 10 V VGS IDM Ptot Tstg Tj IS ISM gate-source voltage peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 43 A; tp = 0.15 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Min -55 -55 Max 25 25 57 40 66 45 ±20 228 93 +175 +175 57 228 90 Unit V V A A A A V A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 10158
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 04 -- 9 September 2002
2 of 14
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
TrenchMOSTM logic level FET
120 P der (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103
03ag19
ID (A)
Limit RDSon = VDS / ID
tp = 10 µs
102 100 µs
10
DC
1 ms 10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 °C; IDM is single pulse; VGS = 5 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10158
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 04 -- 9 September 2002
3 of 14
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