|
Details, datasheet, quote on part number:PHX4N50
| |
| Part: | PHX4N50 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | PHX4N50; Powermos Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHX4N50 datasheet File size : 58 kB |
| Request For quote: | Find where to buy PHX4N50
|
| |
Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistor
PHX4N50
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance. The isolated envelope eliminates the need for additional insulating hardware. These devices are intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 500 3.1 35 1.5 UNIT V A W
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ID IDM PD PD/Tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Ths = 25 °C; VGS = 10 V Ths = 100 °C; VGS = 10 V Ths = 25 °C Ths = 25 °C Ths > 25 °C VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V MIN. - 55 MAX. 3.1 2.0 12 35 0.278 ± 30 180 3.1 150 UNIT A A A W W/K V mJ A °C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
February 1997
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHX4N50
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 3.6 UNIT K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL V(BR)DSS V(BR)DSS / Tj RDS(ON) VGS(TO) gfs IDSS IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ls Ciss Coss Crss PARAMETER Drain-source breakdown voltage Drain-source breakdown voltage temperature coefficient Drain-source on resistance Gate threshold voltage Forward transconductance Drain-source leakage current Gate-source leakage current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA VGS = 10 V; ID = 1.9 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 1.9 A VDS = 500 V; VGS = 0 V VDS = 400 V; VGS = 0 V; Tj = 125 °C VGS = ±30 V; VDS = 0 V ID = 3.1 A; VDD = 400 V; VGS = 10 V MIN. 500 2.0 2 TYP. 0.6 1.2 3.0 3.6 1 30 10 53 4 28 10 33 92 40 4.5 7.5 610 96 54 MAX. 1.5 4.0 25 250 200 64 6 34 UNIT V V/K V S µA µA nA nC nC nC ns ns ns ns nH nH pF pF pF
VDD = 250 V; ID = 3.1 A; RG = 12 ; RD = 79
Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL IS ISM VSD trr Qrr PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Ths = 25°C Ths = 25°C IS = 3.1 A; VGS = 0 V IS = 3.1 A; VGS = 0 V; dI/dt = 100 A/µs MIN. TYP. 390 4 MAX. 3.1 12 1.2 UNIT A A V ns µC
February 1997
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHX4N50
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
with heatsink compound
10
Zth j-hs, Transient thermal impedance (K/W) D = 0.5
PHX2N60
1 0.2 0.1 0.05 0.02
0.1
0.01 single pulse
P D
tp
t D= p T t 100ms 1s
T
0
20
40
60
80 Ths / C
100
120
140
0.001 1us
10us
100us 1ms 10ms tp, pulse width (s)
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 °C = f(Ths)
ID% Normalised Current Derating
with heatsink compound
Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
120 110 100 90 80 70 60 50 40 30 20 10 0
15
ID, Drain current (Amps) Tj = 25 C
PHP4N50 7V 10 V 6.5 V
10
6V 5.5 V
5
5V VGS = 4.5 V
0
20
40
60
80 Ths / C
100
120
140
0
0
5
10 15 20 VDS, Drain-Source voltage (Volts)
25
30
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 °C = f(Ths); conditions: VGS 10 V
ID, Drain current (Amps)
Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS
RDS(on), Drain-Source on resistance (Ohms) 4.5 V 5V 5.5 V VGS = 6 V PHP4N50 Tj = 25 C
100
PHX4N50
4
10
R
1
DS
N (O
)=
VD
ID S/
tp = 10 us 100 us 1 ms 10 ms DC
3 6.5 V 7V 2 10 V
0.1
100 ms
1
0.01
1
10 100 1000 VDS, Drain-source voltage (Volts)
10000
0
0
5 10 ID, Drain current (Amps)
15
Fig.3. Safe operating area. Ths = 25 °C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS
February 1997
3
Rev 1.000
|
|
