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Details, datasheet, quote on part number:PHX5N50E
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| Part: | PHX5N50E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | PHX5N50E; Powermos Transistor ISOlated Version of PHP8N50E |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHX5N50E datasheet File size : 25 kB |
| Request For quote: | Find where to buy PHX5N50E
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Datasheet text preview:
Philips Semiconductors
Objective specification
PowerMOS transistor Isolated version of PHP8N50E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHX5N50E
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 500 4 30 0.8 UNIT V A W
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDS VDGR ±VGS ID IDM IDR IDRM Ptot Tstg Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Ths = 25 °C Ths = 100 °C Ths = 25 °C Ths = 25 °C Ths = 25 °C Ths = 25 °C MIN. -55 MAX. 500 500 30 4 2.5 16 4 16 30 150 150 UNIT V V V A A A A A W °C °C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 8 A; VDD 50 V; VGS = 10 V; unclamped inductive turn-off RGS = 50 energy Tj = 25°C prior to surge Tj = 100°C prior to surge Drain-source repetitive ID = 8 A; VDD 50 V; VGS = 10 V; unclamped inductive turn-off RGS = 50 ; Tj 150 °C energy
WDSR1
-
510 82 13
mJ mJ mJ
1. Pulse width and frequency limited by Tj(max)
November 1996
1
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX5N50E
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 4.1 UNIT K/W K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) VSD PARAMETER Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Source-drain diode forward voltage CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA VDS = 500 V; VGS = 0 V; Tj = 25 °C VDS = 400 V; VGS = 0 V; Tj = 125 °C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 4 A IF = 8 A ;VGS = 0 V MIN. 500 2.0 TYP. 3.0 10 0.1 10 0.67 1.4 MAX. 4.0 100 1.0 100 0.8 2.0 UNIT V V µA mA nA V
November 1996
2
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistor
PHX5N50E
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL gfs Ciss Coss Crss Qg(tot) Qgs Qgd td on tr td off tf trr Qrr Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Total gate charge Gate to source charge Gate to drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Source-drain diode reverse recovery time Source-drain diode reverse recovery charge Internal drain inductance Internal source inductance CONDITIONS VDS = 15 V; ID = 4 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 4 TYP. 6 1500 170 70 65 8 34 20 60 200 75 500 6 4.5 7.5 MAX. 1800 270 120 40 90 250 90 UNIT S pF pF pF nC nC nC ns ns ns ns ns µC nH nH
VGS = 10 V; ID = 8 A; VDS = 400 V
VDD = 30 V; ID = 2.8 A; VGS = 10 V; RGS = 50 ; RGEN = 50 IF = 8 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 100 V Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad
November 1996
3
Rev 1.000
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