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Part: PHX8NQ11T
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> N-Channel
Description: N-channel Trenchmos (tm) Standard Level Fet<<<>>>n-channel Enhancement Mode Field-effect Transistor in a Fully ISOlated Encapsulated Plastic Package Using Trenchmostm Technology.
Company: Philips Semiconductors
Datasheet: Download PHX8NQ11T datasheet File size : 92 kB
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Datasheet text preview:
PHX8NQ11T
N-channel TrenchMOSTM standard level FET
Rev. 01 -- 14 May 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOSTM technology.
1.2 Features
s Low on-state resistance s Isolated package.
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies.
1.4 Quick reference data
s VDS 110 V s Ptot 27.7 W s ID 7.5 A s RDSon 180 m.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F) simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; isolated
g
mbb076
Simplified outline
mb
Symbol
d
s
123
MBK110
SOT186A (TO-220F)
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOSTM standard level FET
3. Ordering information
Table 2: Ordering information Package Name PHX8NQ11T TO-220F Description Version Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220 `full pack' Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Th = 25 °C peak source (diode forward) current Th = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 4.5 A; tp = 0.1 ms; VDD 100 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 °C Th = 25 °C; VGS = 10 V; Figure 2 and 3 Th = 100 °C; VGS = 10 V; Figure 2 Th = 25 °C; pulsed; tp 10 µs; Figure 3 Th = 25 °C; Figure 1 Conditions 25 °C Tj 150 °C 25 °C Tj 150 °C; RGS = 20 k Min -55 -55 Max 110 110 ±20 7.5 4.7 30.2 27.7 +150 +150 7.5 30.2 35 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 13285
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 14 May 2004
2 of 12
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOSTM standard level FET
120 Pder (%) 80
03aa13
120 Ider (%) 80
03aa21
40
40
0 0 50 100 150 Th (°C) 200
0 0 50 100 150 Th (°C) 200
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of heatsink temperature.
Fig 2. Normalized continuous drain current as a function of heatsink temperature.
102 ID (A) Limit RDSon = VDS / ID tp = 10 µ s
03aq71
10 100 µ s
DC 1
1 ms
10 ms
10-1 1 10 102 VDS (V) 103
Th = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13285
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 14 May 2004
3 of 12
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