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Details, datasheet, quote on part number:PMBD353
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| Part: | PMBD353 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | PMBD353; Schottky Barrier Double Diode;; Package: SOT23 (SST3) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PMBD353 datasheet File size : 53 kB |
| Request For quote: | Find where to buy PMBD353
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PMBD353 Schottky barrier double diode
Product specification Supersedes data of 1999 May 25 2001 Oct 15
Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES · Low forward voltage · Small SMD package · Low capacitance. APPLICATIONS · UHF mixer · Sampling circuits · Modulators · Phase detection. DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package.
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Top view
handbook, 2 columns
PMBD353
PINNING MARKING CODE(1) 4F PIN 1 2 3 DESCRIPTION cathode k1 anode a2 common connection a1, k2
MARKING TYPE NUMBER PMBD353 Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China.
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handbook, 2 columns
3 2
MGC487
1
2
MGC421
Fig.1
Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature - - -65 - 4 30 +150 100 V mA °C °C PARAMETER MIN. MAX. UNIT
2001 Oct 15
2
Philips Semiconductors
Product specification
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IR Cd Note 1. Pulse test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS reverse current diode capacitance VR = 3 V; note 1; see Fig.3 f = 1 MHz; VR = 0; see Fig.4 PARAMETER CONDITIONS
PMBD353
MAX.
UNIT
350 450 600 0.25 1
mV mV mV µA pF
VALUE 500
UNIT K/W
2001 Oct 15
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