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Details, datasheet, quote on part number:PMBD354
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
PMBD354 Schottky barrier double diode
Product specification Supersedes data of 2002 Aug 06 2003 Mar 25
Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES · Low forward voltage · Small SMD package · Low capacitance · Matched capacitance. APPLICATIONS · UHF mixer · Sampling circuits · Modulators · Phase detection. DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package. MARKING TYPE NUMBER PMBD354 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. = W : Made in China. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature - - -65 - 4 30 +150 100 PARAMETER MIN. MARKING CODE(1) *V8
1
Top view
handbook, 2 columns
PMBD354
PINNING PIN 1 2 3 cathode k1 anode a2 common connection a1, k2 DESCRIPTION
3
handbook, 2 columns
3 2
MGC487
1
2
MGC421
Fig.1
Simplified outline (SOT23) pin configuration and symbol.
MAX.
UNIT
V mA °C °C
2003 Mar 25
2
Philips Semiconductors
Product specification
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IR Cd Cd Note 1. Pulse test: tp = 300 µs; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS reverse current diode capacitance capacitance matching VR = 3 V; note 1; see Fig.3 f = 1 MHz; VR = 0; see Fig.4 f = 1 MHz; VR = 0 PARAMETER CONDITIONS
PMBD354
MAX.
UNIT
350 450 600 0.25 1 0.1
mV mV mV µA pF pF
VALUE 500
UNIT K/W
2003 Mar 25
3
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