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Details, datasheet, quote on part number:PMBD6050
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| Part: | PMBD6050 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | PMBD6050; High-speed Diode;; Package: SOT23 (SST3) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PMBD6050 datasheet File size : 65 kB |
| Request For quote: | Find where to buy PMBD6050
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD6050 High-speed diode
Product specification Supersedes data of 1996 Sep 18 1999 May 11
Philips Semiconductors
Product specification
High-speed diode
FEATURES · Small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 70 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. APPLICATIONS · High-speed switching in thick and thin-film circuits.
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Marking code: p5A = made in Hong Kong; t5A = made in Malaysia.
handbook, halfpage 2
PMBD6050
DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode
1 2 n.c. 3
MAM185
1
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW °C °C note 1; see Fig.2 CONDITIONS - - - - MIN. MAX. 85 70 215 500 V V mA mA UNIT
1999 May 11
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Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 50 V VR = 50 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 100 50 1.5 4 715 855 1 1.25 CONDITIONS MAX.
PMBD6050
UNIT mV mV V V nA µA pF ns
Vfr
forward recovery voltage
1.75
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 330 500 UNIT K/W K/W
1999 May 11
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