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Details, datasheet, quote on part number:PMBD6100
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| Part: | PMBD6100 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | PMBD6100; High-speed Double Diode;; Package: SOT23 (SST3) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PMBD6100 datasheet File size : 64 kB |
| Request For quote: | Find where to buy PMBD6100
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD6100 High-speed double diode
Product specification Supersedes data of 1999 May 11 2003 Mar 25
Philips Semiconductors
Product specification
High-speed double diode
FEATURES · Small plastic SMD package · High switching speed: max. 4 ns · General application · Continuous reverse voltage: max. 70 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching in surface mounted circuits. MARKING
3
handbook, 4 columns
PMBD6100
PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode
DESCRIPTION The PMBD6100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
2
1
2
1
TYPE NUMBER PMBD6100 Note
MARKING CODE(1) 5B
3
Top view
MAM108
1. = p : Made in Hong Kong. = t : Made in Malaysia. = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 - - - - 85 70 215 125 V V mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
2003 Mar 25
2
Philips Semiconductors
Product specification
High-speed double diode
PMBD6100
SYMBOL IFRM IFSM
PARAMETER repetitive peak forward current non-repetitive peak forward current
CONDITIONS - square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s - - - -
MIN.
MAX. 450
UNIT mA
4 1 0.5 250 +150 150
A A A mW °C °C
Ptot Tstg Tj Note
total power dissipation storage temperature junction temperature
Tamb = 25 °C; note 1
-65 -
1. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IR reverse current see Fig.5 VR = 50 V VR = 50 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 - - - - 100 50 1.5 4 nA µA pF ns 550 - - 0.85 700 855 1 1.1 mV mV V V PARAMETER CONDITIONS MIN. MAX. UNIT
Vfr
forward recovery voltage
-
1.75
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W
2003 Mar 25
3
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