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Details, datasheet, quote on part number:PMBD7000
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| Part: | PMBD7000 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | PMBD7000; High-speed Double Diode;; Package: SOT23 (SST3) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PMBD7000 datasheet File size : 65 kB |
| Request For quote: | Find where to buy PMBD7000
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD7000 High-speed double diode
Product specification Supersedes data of 1996 Sep 18 1999 May 11
Philips Semiconductors
Product specification
High-speed double diode
FEATURES · Small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 100 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching in e.g. surface mounted circuits.
handbook, halfpage 2
PMBD7000
PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection
DESCRIPTION The PMBD7000 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
1
2 3 3
1
MAM232
Marking code: p5C = made in Hong Kong; t5C = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW °C °C - - - - - 100 100 215 125 450 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
1999 May 11
2
Philips Semiconductors
Product specification
High-speed double diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA IR reverse current see Fig.5 VR = 50 V VR = 100 V VR = 50 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 - - - - - 550 670 - 0.75 - PARAMETER CONDITIONS MIN.
PMBD7000
MAX.
UNIT
700 820 1 1.1 1.25 300 500 100 1.5 4
mV mV V V mV nA nA µA pF ns
Vfr
forward recovery voltage
-
1.75
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W
1999 May 11
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