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Details, datasheet, quote on part number:PMBD7100
 
 
Part:PMBD7100
Category:Discrete => Diodes & Rectifiers => High Speed
Description:High-speed Double Diode<<<>>>the PMBD7100 Consists of Two High-speed Switching Diodes With Common Cathodes, Fabricated in Planar Technology, And Encapsulated in The Small SOT23 SMD Plastic Package. <<<>>><<<>>> <<<>>> Features Small Plastic SMD Package <<<>>>High Switching Speed: Max. 4 NS <<<>>>Continuous Reverse Voltage: Max. 100 V <<<>>>Repetitive Peak Reverse Voltage: Max. 100 V <<<>>>Repetitive Peak Forward Current: Max. 450 MA. <<<>>><<<>>> <<<>>> Applications High-speed Switching in Thick And Thin-film Circuits.
Company:Philips Semiconductors
Datasheet:Download PMBD7100 datasheet   File size : 64 kB
Request For quote:  Find where to buy PMBD7100
 



Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD7100 High-speed double diode
Product specification 2003 Nov 07
Philips Semiconductors
Product specification
High-speed double diode
FEATURES · Small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 100 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching in thick and thin-film circuits. DESCRIPTION The PMBD7100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 SMD plastic package. MARKING
Top view 1 2
MAM383
PMBD7100
PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common connection
handbook, halfpage
3 3
1
2
TYPE NUMBER PMBD7100 Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION
MARKING CODE(1) *3A
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE TYPE NUMBER NAME PMBD7100 - DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23
2003 Nov 07
2
Philips Semiconductors
Product specification
High-speed double diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 - - - - - PARAMETER CONDITIONS
PMBD7100
MIN.
MAX.
UNIT
100 100 215 125 450
V V mA mA mA
4 1 0.5 250 +150 150
A A A mW °C °C
2003 Nov 07
3